Process for producing silicon oxide films for organoaminosilane precursors

• US 7,875,312 B2
• Filed: 05/23/2006
• Issued: 01/25/2011
• Est. Priority Date: 05/23/2006
• Status: Active Grant

• Current Assignee: Versum Materials US, LLC (Merck & Co., Inc.)
• Original Assignee: Air Products and Chemicals Incorporated (Linde Plc)
• Inventors: Gaffney, Thomas Richard, Thridandam, Hareesh, Xiao, Manchao, Lei, Xinjian
• Primary Examiner(s): Meeks; Timothy H
• Assistant Examiner(s): MILLER, JR, JOSEPH ALBERT
• Application Number:
  US11/439,554
• Publication Number:
  US 20070275166A1
• Time in Patent Office: 1,708 Days
• Field of Search: None
• US Class Current: 427/248.1
• CPC Class Codes: C23C 16/402 Silicon dioxide
• CPC Class Codes: H01L 21/02126 the material containing Si, O, and at least one of H, N, C, F, or other non-metal elements, e.g. SiOC, SiOC:H or SiONC
• CPC Class Codes: H01L 21/0214 the material being a silicon oxynitride, e.g. SiON or SiON:H
• CPC Class Codes: H01L 21/02164 the material being a silicon oxide, e.g. SiO2
• CPC Class Codes: H01L 21/02219 the compound comprising silicon and nitrogen
• CPC Class Codes: H01L 21/02271 deposition by decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition H01L21/02266 takes precedence
• CPC Class Codes: H01L 21/0228 deposition by cyclic CVD, e.g. ALD, ALE, pulsed CVD
• CPC Class Codes: H01L 21/3145 formed by deposition from a gas or vapour
• CPC Class Codes: H01L 21/31608 Deposition of SiO2 H01L21/31625, H01L21/31629 and H01L21/31633 take precedence
• CPC Class Codes: H01L 21/31633 Deposition of carbon doped silicon oxide, e.g. SiOC

Abstract

The present invention is directed to a method for depositing a silicon oxide layer on a substrate by CVD. The reaction of an organoaminosilane precursor where the alkyl group has at least two carbon atoms in the presence of an oxidizing agent allows for the formation of a silicon oxide film. The organoaminosilanes are represented by the formulas:

The use of diisopropylaminosilane is the preferred precursor for the formation of the silicon oxide film.

Claims

1. A process for forming a silicon oxide film on a substrate which comprises:

forming the silicon oxide film on the substrate in a chemical vapor deposition process by reaction with an oxidizing agent with a silane precursor selected from the group consisting of an organoaminosilane represented by the formulas;

2. The process of claim 1 wherein R and R¹ are cyclic.

3. The process of claim 1 wherein R and R¹ are combined into a ring in the form of (CH₂) and where n is from 4-5.

4. The process of claim 1 wherein the organoaminosilane is represented by the formula A where R and R1 are isopropyl.

5. The process of claim 1 wherein the organoaminosilane is represented by the formulas:

6. The process of claim 1 wherein the oxidizing agent is selected from the group consisting of oxygen, hydrogen peroxide, ozone and nitrous oxide.

7. The process of claim 1 wherein the organoaminosilane is represented by the formula B and within that class, the organoaminosilane is selected from the group having the formula:

8. The process of claim 7 wherein the oxygen source is selected from the group consisting of oxygen, hydrogen peroxide, ozone and nitrous oxide.

9. The process of claim 8 wherein the organoaminosilane is represented by the formula:

10. The process of claim 1 wherein the organoaminosilane is represented by the formula C and within that class, the organoaminosilane is selected from the group having the formulas:

11. The process of claim 1 wherein a carbon and a hydrogen source are incorporated in the deposition chamber for forming a silicon oxide film doped with carbon and hydrogen.

12. The process of claim 11 wherein a nitrogen source is incorporated in the deposition chamber for forming a silicon oxide film doped with carbon, nitrogen, and hydrogen.

21. The process of claim 1 wherein the chemical vapor deposition is atomic layer deposition.

13. A process for producing a silicon oxide dielectric layer upon a substrate by chemical vapor deposition in a chemical vapor deposition chamber which comprises:

introducing diisopropylaminosilane and an oxidizing agent into said chemical vapor deposition chamber under conditions for reacting said diisopropylaminosilane with said oxidizing agent and depositing a silicon oxide layer onto said substrate.

14. The process of claim 13 wherein the oxidizing agent is selected from the group consisting of ozone, oxygen, nitrous oxide and hydrogen peroxide.

15. The process of claim 14 wherein the mole ratio of oxidizing agent to diisopropylaminosilane is from 0.1 to 10 moles oxidizing agent per mole of diisopropylaminosilane.

19. The process of claim 14 wherein a temperature of from 350 to 700°

C. is employed in said chemical vapor deposition chamber.

20. The process of claim 14 wherein a pressure from 0.1 to 500 Torr is employed in said chemical vapor deposition chamber.

22. The process of claim 14 wherein the chemical vapor deposition is atomic layer deposition.

24. The process of claim 13 wherein the introducing step further comprises:

adding a source selected from carbon, hydrogen, nitrogen, and combination thereof.

16. A process for producing a silicon oxynitride dielectric layer upon a substrate by chemical vapor deposition in a chemical vapor deposition chamber which comprises:

introducing diisopropylaminosilane, a nitrogen source and an oxidizing agent into said chemical vapor deposition chamber under conditions for reacting said diisopropylaminosilane with said oxidizing compound, and said nitrogen source to deposit a silicon oxynitride layer onto said substrate.

17. The process of claim 16 wherein the oxidizing agent is selected from the group consisting of ozone, oxygen, nitric oxide and hydrogen peroxide.

18. The process of claim 16 wherein the nitrogen source is selected from the group consisting of ammonia, hydrazine, alkylhydrazine, dialkylhydrazine and mixture thereof.

23. The process of claim 16 wherein the chemical vapor deposition is atomic layer deposition.