Method for a multiple exposure, microlithography projection exposure installation and a projection system

• US 7,875,418 B2
• Filed: 06/19/2008
• Issued: 01/25/2011
• Est. Priority Date: 03/16/2004
• Status: Active Grant

• Current Assignee: CARL Zeiss SMT GmbH (Carl-Zeiss-Stiftung)
• Original Assignee: Carl Zeiss AG (Carl-Zeiss-Stiftung)
• Inventors: Scharnweber, Ralf
• Primary Examiner(s): Duda; Kathleen
• Application Number:
  US12/142,138
• Publication Number:
  US 20080311526A1
• Time in Patent Office: 950 Days
• Field of Search: 430/311
• US Class Current: 430/311
• CPC Class Codes: G03F 7/70208 Multiple illumination paths, e.g. radiation distribution devices, microlens illumination systems, multiplexers or demultiplexers for single or multiple projection systems
• CPC Class Codes: G03F 7/70275 Multiple projection paths, e.g. array of projection systems, microlens projection systems or tandem projection systems
• CPC Class Codes: G03F 7/70991 Connection with other apparatus, e.g. multiple exposure stations, particular arrangement of exposure apparatus and pre-exposure and/or post-exposure apparatus; Shared apparatus, e.g. having shared radiation source, shared mask or workpiece stage, shared base-plate; Utilities, e.g. cable, pipe or wireless arrangements for data, power, fluids or vacuum

Abstract

In a method for multiply exposing at least one substrate coated with a photosensitive layer, a first exposure is carried out in accordance with a first set of exposure parameters on a first projection system, and a second exposure is carried out in accordance with a second set of exposure parameters on a second projection system spatially separated from the first projection system. The projection systems are integrated in a common projection exposure installation. The first exposure can be carried out, for example, with an amplitude mask, the second exposure with a phase mask. The use of a number of projection systems enables multiple exposure that is performed in parallel and is therefore timesaving.

Claims

1. An exposure method for exposing a substrate, the exposure method comprising:

providing a microlithography projection exposure installation comprising a first projection system and a second projection system disposed away from the first projection system in a first direction;

radiating a first light beam onto a first exposure area using the first projection system;

radiating a second light beam onto a second exposure area using the second projection system, the first and second exposure areas being defined at different positions in the first direction; and

moving the substrate in the first direction to thereby expose a predetermined area on the substrate with a first pattern image which is formed by the first light beam and a second pattern image which is formed by the second light beam.

2. The exposure method according to claim 1, wherein the first and second light beams are radiated onto the first and second exposure areas under mutually different exposure conditions.

3. The exposure method according to claim 1, wherein the first light beam is radiated onto the first exposure area via a first plurality of optical systems, and the second light beam is radiated onto the second exposure area via a second plurality of optical systems different from the first plurality of optical systems.

4. The exposure method according to claim 1, wherein first and second pattern-forming members are illuminated with the exposure light beams respectively to form the first and second pattern images, the exposure light beam is radiated onto the first exposure area via the first pattern-forming member and first and third optical systems, and the exposure light beam is radiated onto the second exposure area via a second optical system different from the first optical system and the third optical system.

5. The exposure method according to claim 1, wherein the first projection system operates with a first set of exposure parameters, and the second projection system operates with a second set of exposure parameters different from the first set of exposure parameters.

6. A method, comprising:

while a substrate is in a first position, radiating an area of the substrate with a first light beam using a first projection system of a microlithography projection exposure installation;

moving the substrate from the first position to a second position different from the first position;

while the substrate is in the second position, radiating the area of the substrate with a second light beam using a second projection system of the microlithography projection exposure installation, the second projection system being different from the first projection system.

7. The method according to claim 6, wherein the first projection system operates with a first set of exposure parameters, and the second projection system operates with a second set of exposure parameters different from the first set of exposure parameters.

8. The method of claim 6, wherein the first projection system comprises an illumination system and a projection objective.

9. The method of claim 8, wherein the second projection system comprises an illumination system and a projection objective.