Precursors for CVD silicon carbo-nitride and silicon nitride films
First Claim
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1. A process for forming silicon nitride or silicon carbo-nitride films on a substrate through chemical vapor deposition of a silicon nitride or silicon carbo-nitride film forming precursor which comprises:
- using a precursor selected from the group consisting of an aminosilane represented by the formulas;
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Abstract
Classes of liquid aminosilanes have been found which allow for the production of silicon carbo-nitride films of the general formula SixCyNz. These aminosilanes, in contrast, to some of the precursors employed heretofore, are liquid at room temperature and pressure allowing for convenient handling. In addition, the invention relates to a process for producing such films.
The classes of compounds are generally represented by the formulas:
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- and mixtures thereof, wherein R and R1 in the formulas represent aliphatic groups typically having from 2 to about 10 carbon atoms, e.g., alkyl, cycloalkyl with R and R1 in formula A also being combinable into a cyclic group, and R2 representing a single bond, (CH2)n, a ring, or SiH2.
43 Citations
24 Claims
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1. A process for forming silicon nitride or silicon carbo-nitride films on a substrate through chemical vapor deposition of a silicon nitride or silicon carbo-nitride film forming precursor which comprises:
using a precursor selected from the group consisting of an aminosilane represented by the formulas; - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 17, 18, 19, 20, 21)
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13. In a process for forming a silicon nitride or silicon carbo-nitride film wherein such film is formed by the chemical vapor deposition of a silane precursor, the improvement which comprises:
employing an aminosilane as the silane precursor which is represented by the formula; - View Dependent Claims (14, 15, 16)
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22. A process for forming a silicon carbo-nitride film on a substrate through chemical vapor deposition comprising:
using a precursor selected from the group consisting of an aminosilane represented by the formula;
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23. A process for forming a silicon carbo-nitride film on a substrate through chemical vapor deposition which comprises:
using a precursor selected from the group consisting of an aminosilane represented by the formulas;
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24. A process for forming silicon nitride or silicon carbo-nitride films on a substrate through chemical vapor deposition of a silicon nitride or silicon carbo-nitride film forming precursor which comprises:
using a precursor selected from the group consisting of an aminosilane represented by the formulas;
Specification