Shallow trench capacitor compatible with high-K / metal gate

• US 7,875,919 B2
• Filed: 03/31/2008
• Issued: 01/25/2011
• Est. Priority Date: 03/31/2008
• Status: Active Grant

• Current Assignee: Globalfoundries US Incorporated (GlobalFoundries, Inc.)
• Original Assignee: International Business Machines Corporation
• Inventors: Brodsky, MaryJane, Booth, Roger A. Jr., Pei, Chengwen, Cheng, Kangguo
• Primary Examiner(s): Andújar; Leonardo
• Assistant Examiner(s): KLEIN, JORDAN M
• Application Number:
  US12/059,174
• Publication Number:
  US 20090242953A1
• Time in Patent Office: 1,030 Days
• Field of Search: 257/301, 257/296, 257/298, 257/300, 257/E27.084, 257/E21.646
• US Class Current: 257/301
• CPC Class Codes: H01L 27/0629 in combination with diodes, or resistors, or capacitors

Abstract

Forming a shallow trench capacitor in conjunction with an FET by forming a plurality of STI trenches; for the FET, implanting a first cell well having a first polarity between a first and a second of the STI trenches; for the capacitor, implanting a second cell well having a second polarity in an area of a third of the STI trenches; removing dielectric material from the third STI trench; forming a gate stack having a first portion located between the first and the second of the STI trenches and a second portion located over and extending into the third trench; and performing a source/drain implant of the same polarity as the second cell well, thereby forming a FET in the first cell well, and a capacitor in the second cell well. The second polarity may be opposite from the first polarity. An additional implant may reduce ESR in the second cell well.

Claims

1. A circuit comprising a FET and a shallow trench capacitor, wherein the FET comprises:

a gate stack, the gate stack comprising a high-K dielectric layer and a metal layer, the metal layer disposed on the high-K dielectric layer, and wherein the shallow trench capacitor comprises;

a trench extending into a surface of a substrate and having a depth (d) and a width (w), wherein the depth (d) of the trench is less than 5 times the width (w) of the trench;

a cell well implanted to have a first polarity encompassing the trench;

the trench is filled with an insulating layer followed by a conductive layer, wherein the insulating layer comprises a layer of the same high-K dielectric used in the high-K dielectric layer of the gate stack of the FET, and wherein the conductive layer comprises a layer of the same metal used in the metal layer of the gate stack of the FET and wherein is both the high-K dielectric layer and the metal layer are patterned so as to have a portion located over the trench;

and

source/drain implantations in the substrate on opposite sides of the trench and having the same polarity as the cell well.

2. The circuit of claim 1, wherein:

the trench has a depth (d) of approximately 200-300 nm, and a width (w) of at least 100 nm.

3. The circuit of claim 1, wherein:

the conductive layer further comprises a poly layer overlying the metal layer.

4. A design structure embodied in a machine readable medium for designing, manufacturing, or testing a design, the design structure comprising a FET and a shallow trench capacitor, wherein the FET comprises:

a gate stack, the gate stack comprising a high-K dielectric layer and a metal layer, the metal layer disposed on the high-K dielectric layer, and wherein the shallow trench capacitor comprises;

a trench extending into a surface of a substrate and having a depth (d) and a width (w), wherein the depth (d) of the trench is less than 5 times the width (w) of the trench;

a cell well implanted to have a first polarity encompassing the trench;

the trench is filled with an insulating layer followed by a conductive layer, wherein the insulating layer comprises a layer of the same high-K dielectric used in the high-K dielectric layer of the gate stack of the FET, and wherein the conductive layer comprises a layer of the same metal used in the metal layer of the gate stack of the FET and wherein is both the high-K dielectric layer and the metal layer are patterned so as to have a portion located over the trench;

and

source/drain implantations in the substrate on opposite sides of the STI trench and having the same polarity as the cell well, and wherein the design structure is in the form of a hardware-description language.

5. The design structure of claim 4 wherein the design structure comprises a netlist, which describes the design.

6. The design structure of claim 4 wherein the design structure resides on storage medium as a data format used for the exchange of layout data of integrated circuits.

7. The design structure of claim 4 wherein the design structure includes at least one of test data files, characterization data, verification data, or design specifications.