Complaint bonding structures for semiconductor devices

• US 7,875,984 B2
• Filed: 03/04/2009
• Issued: 01/25/2011
• Est. Priority Date: 03/04/2009
• Status: Active Grant

• Current Assignee: Lumileds LLC (Apollo Global Management, Inc.)
• Original Assignee: Philips Lumileds Lighting Company LLC (Apollo Global Management, Inc.), Koninklijke Philips Electronics N.V. (Koninklijke Philips N.V.)
• Inventors: Neff, James G., Epler, John E., Krames, Michael R.
• Primary Examiner(s): DANG, TRUNG Q
• Application Number:
  US12/397,392
• Publication Number:
  US 20100224902A1
• Time in Patent Office: 692 Days
• Field of Search: 257/778, 257/780, 257/782, 257/E23.003
• US Class Current: 257/778
• CPC Class Codes: H01L 2224/0401 Bonding areas specifically adapted for bump connectors, e.g. under bump metallisation [UBM]
• CPC Class Codes: H01L 2224/0603 Bonding areas having different sizes, e.g. different heights or widths
• CPC Class Codes: H01L 2224/1403 Bump connectors having different sizes, e.g. different diameters, heights or widths
• CPC Class Codes: H01L 33/0093 Wafer bonding; Removal of the growth substrate
• CPC Class Codes: H01L 33/38 with a particular shape
• CPC Class Codes: H01L 33/62 Arrangements for conducting electric current to or from the semiconductor body, e.g. lead-frames, wire-bonds or solder balls

Abstract

A compliant bonding structure is disposed between a semiconductor light emitting device and a mount. When the semiconductor light emitting device is attached to the mount, for example by providing pressure, heat, and/or ultrasonic energy to the semiconductor light emitting device, the compliant bonding structure collapses to partially fill a space between the semiconductor light emitting device and the mount. In some embodiments, the compliant bonding structure is plurality of metal bumps that undergo plastic deformation during bonding. In some embodiments, the compliant bonding structure is a porous metal layer.

Claims

1. A structure comprising:

a light emitting device comprising;

a semiconductor structure comprising a light emitting layer disposed between an n-type region and a p-type region;

a metal p-contact disposed on the p-type region; and

a metal n-contact disposed on the n-type region;

wherein;

the metal p-contact and the metal n-contact are both formed on a same side of the semiconductor structure; and

one of the metal p-contact and the metal n-contact is a large area contact and the other of the metal p-contact and the metal n-contact is a small area contact, the large area contact having a larger area than the small area contact;

a mount; and

a bonding structure connecting the light emitting device to the mount, wherein in an area underlying the small area contact, the bonding structure comprises a plurality of metal regions separated by gaps, wherein nearest neighbor metal regions are separated by a gap less than 5 microns wide.

2. The structure of claim 1 wherein the metal regions comprise gold bumps compressed by bonding the light emitting device to the mount.

3. The structure of claim 1 wherein the metal regions comprise a metal with a Young'"'"'s modulus less than 150 GPa.

4. The structure of claim 1 wherein in an area underlying the large area contact, the bonding structure comprises a plurality of metal regions separated by gaps.

5. The structure of claim 4 wherein the portion of the bonding structure underlying the large area contact is separated from the portion of the bonding structure underlying the small area contact by less than 40 microns.

6. The structure of claim 1 wherein the small area contact comprises a center portion and an arm portion, wherein the arm portion extends from the center portion toward an edge of the light emitting device, wherein a portion of the bonding structure underlies the center portion and no portion of the bonding structure underlies the arm portion.

7. The structure of claim 6 further comprising a gap disposed between the mount and the arm portion.

8. The structure of claim 6 wherein the small area contact is the metal n-contact, wherein the metal n-contact is formed in a trench formed in the semiconductor structure, wherein a top surface of the metal n-contact is recessed relative to a top surface of the metal p-contact.

9. The structure of claim 8 further comprising a dielectric layer disposed between a portion of the metal p-contact and a portion of the metal n-contact, wherein a portion of a top surface of the dielectric layer extends above the top surfaces of the metal n-contact and the metal p-contact.

10. The structure of claim 9 further comprising a portion of the bonding structure disposed between the mount and the portion of the top surface of the dielectric layer extending above the top surfaces of the metal n-contact and the metal p-contact.

11. The structure of claim 6 wherein the center portion is no more than 45 microns wide and the arm portion is no more than 25 microns wide.

12. The structure of claim 1 wherein no bonding structure is formed in a second area underlying the large area contact, wherein the second area is aligned with a metal trace formed on the mount.

13. The structure of claim 1 further comprising a continuous, linear metal bump disposed between the light emitting device and the mount proximate to an edge of the light emitting device, wherein the continuous, linear metal bump forms a seal between the light emitting device and the mount.

14. The structure of claim 1 further comprising a continuous, curved metal bump disposed between the light emitting device and the mount proximate to an edge of the light emitting device, wherein the continuous, curved metal bump forms a seal between the light emitting device and the mount.

15. The structure of claim 1 further comprising at least two lines of offset metal bumps disposed between the light emitting device and the mount proximate to an edge of the light emitting device, wherein the at least two lines of metal bumps are arranged to collapse during bonding to form a continuous seal between the light emitting device and the mount.