Micromachined thermal mass flow sensor with self-cleaning capability and methods of making the same

• US 7,878,056 B2
• Filed: 12/19/2007
• Issued: 02/01/2011
• Est. Priority Date: 12/19/2007
• Status: Active Grant

• Current Assignee: Siargo Limited
• Original Assignee: Siargo Limited
• Inventors: Wang, Gaofeng, Huang, Liji, Yao, Yahong, Chen, Chih-Chang
• Primary Examiner(s): Kirkland, III; Freddie
• Application Number:
  US11/960,261
• Publication Number:
  US 20090158859A1
• Time in Patent Office: 1,140 Days
• Field of Search: 732/042.2, 732/042.6
• US Class Current: 73/204.26
• CPC Class Codes: G01F 1/6845 Micromachined devices
• CPC Class Codes: G01F 1/6888 Thermoelectric elements, e.g. thermocouples, thermopiles
• CPC Class Codes: G01F 15/006 characterised by the use of a particular material, e.g. anti-corrosive material G01F15/14 takes precedence

Abstract

The current invention generally relates to Micro Electro Mechanical Systems (MEMS) thermal mass flow sensors for measuring the flow rate of a flowing fluid (gas/liquid) and the methods of manufacturing on single crystal silicon wafers. The said mass flow sensors have self-cleaning capability that is achieved via the modulation of the cavity of which the sensing elements locate on the top of the cavity that is made of a silicon nitride film; alternatively the sensing elements are fabricated on top of a binary silicon nitride/conductive polycrystalline silicon film under which is a porous silicon layer selective formed in a silicon substrate. Using polycrystalline silicon or the sensing elements as electrodes, an acoustic wave can be generated across the porous silicon layer which is also used for the thermal isolation of the sensing elements. The vibration or acoustic energy is effective to remove foreign materials deposited on top surface of the sensing elements that ensure the accuracy and enhance repeatability of the thermal mass flow sensing.

Claims

1. A micromachined thermal mass flow sensor with self-cleaning components comprising:

a suspending membrane with an resonant cavity underneath;

a heater thermistor being disposed on top of said suspending membrane;

an upstream temperature sensing thermistor being disposed on top of said suspending membrane;

a downstream temperature sensing thermistor being disposed on top of said suspending membrane;

a reference thermistor being disposed on top of a region of non-suspending membrane;

a top electrode being formed by in serial connecting said heater thermistor, said upstream temperature sensing thermistor, and said downstream temperature sensing thermistor by an external circuit; and

a bottom electrode being formed by a doped polysilicon layer or a metal layer which is disposed on a bottom surface of said resonant cavity;

wherein the self-cleaning components of said thermal mass flow sensor generate a mechanical vibration on said suspending membrane by modulating an electric voltage between said top and bottom electrodes of said resonant cavity such that foreign particles are detached and blown away by a gas flow from the top surface of said suspending membrane.

2. The micromachined thermal mass flow sensors with self-cleaning components of claim 1 wherein

said modulating electric voltage is a pulse voltage or a sinusoidal wave function with a desired frequency.

3. A micromachined thermal mass flow sensor with self-cleaning components comprising:

a selectively formed porous silicon island with a dielectric film on top as electric insulation layer being provided on a silicon substrate as a thermally isolated area for flow sensor operation;

a heater thermistor being disposed on a top surface of said porous silicon island;

an upstream temperature sensing thermistors being disposed on the top surface of said porous silicon island;

a downstream temperature sensing thermistors being disposed on the top surface of said porous silicon island; and

a reference thermistor being disposed on a region of said silicon substrate other than said porous silicon island;

wherein the self-cleaning components of said thermal mass flow sensor actuate as thermal source for an ultrasonic acoustic wave emitter, said heater thermistor and said temperature sensing thermistors by introducing a pulsed voltage source to elevate a temperature of said heater thermistor and said temperature sensing thermistors.

4. The micromachined thermal mass flow sensor with self-cleaning components of claim 3 wherein

a silicon nitride layer is deposited on top of said silicon substrate and patterned as a hard mask for selective formation of said porous silicon.

5. The micromachined thermal mass flow sensor with self-cleaning components of claim 3 wherein

four open slots on said dielectric film around each side of perimeters of said porous silicon island are formed to isolate a lateral heat conduction from said heater thermistor to said silicon substrate.

6. The micromachined thermal mass flow sensor with self-cleaning components of claim 3 wherein

said self-cleaning components include a thermally induced unitrasonic acoustic wave emitter that generates an ultrasonic energy wave on the front surface of said porous silicon island.

7. The micromachined thermal mass flow sensor with self-cleaning components of claim 6 wherein

said thermally induced ultrasonic acoustic wave emitter is formed by combining said porous silicon island, said dielectric film, and said thermistors on the top surface of said porous silicon island.

8. The micromachined thermal mass flow sensor with self-cleaning components of claim 7 wherein

said generated ultrasonic energy wave agitates foreign particles such that they are detached and blown away from the top surface of said porous silicon island which is an active area for flow sensor operation.

9. The micromachined thermal mass flow sensor with self-cleaning components of claim 3 wherein

said porous silicon island is selectively formed as a thermally isolated area on said silicon substrate by electrochemical anodization.