Method of processing a workpiece in a plasma reactor with independent wafer edge process gas injection
First Claim
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1. A method of performing a plasma etch process on a workpiece surface of a workpiece comprising a surface material to be etched, comprising:
- placing the workpiece on a workpiece support in a chamber of the plasma reactor;
introducing through a ceiling gas disperser a first process gas comprising an etchant species capable of causing etching of said surface material in a plasma, said ceiling gas disperser comprising mutually concentric inner and outer gas dispersers;
generating a plasma in said chamber by coupling RF power into said chamber;
controlling etch rate distribution across said workpiece surface by adjusting respective flow rates of said first process gas through respective ones of said inner and outer gas dispersers;
reducing etch rate at an edge periphery of said workpiece surface relative to etch rate across a remainder of said workpiece surface by injecting a polymerizing gas through a workpiece support gas disperser provided on said workpiece support and facing said edge periphery, said workpiece support gas disperser defining a polymerizing gas injection pattern directed toward said edge periphery of said workpiece surface and confined generally to said edge periphery.
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Abstract
The disclosure concerns a method of processing a workpiece or in a plasma reactor chamber, using independent gas injection at the wafer edge.
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Citations
8 Claims
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1. A method of performing a plasma etch process on a workpiece surface of a workpiece comprising a surface material to be etched, comprising:
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placing the workpiece on a workpiece support in a chamber of the plasma reactor; introducing through a ceiling gas disperser a first process gas comprising an etchant species capable of causing etching of said surface material in a plasma, said ceiling gas disperser comprising mutually concentric inner and outer gas dispersers; generating a plasma in said chamber by coupling RF power into said chamber; controlling etch rate distribution across said workpiece surface by adjusting respective flow rates of said first process gas through respective ones of said inner and outer gas dispersers; reducing etch rate at an edge periphery of said workpiece surface relative to etch rate across a remainder of said workpiece surface by injecting a polymerizing gas through a workpiece support gas disperser provided on said workpiece support and facing said edge periphery, said workpiece support gas disperser defining a polymerizing gas injection pattern directed toward said edge periphery of said workpiece surface and confined generally to said edge periphery. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8)
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Specification