Hybrid window layer for photovoltaic cells
First Claim
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1. A method for manufacturing a solar cell comprising the steps of:
- (i) providing a transparent substrate;
(ii) depositing a transparent conducting oxide layer on the transparent substrate;
(iii) depositing a second sub-p-layer on the transparent conducting oxide layer at a second temperature;
(iv) depositing a first sub-p-layer on the second sub-p-layer at a first temperature that is different from the second temperature;
(v) depositing an i-layer on the first sub-p-layer; and
(vi) depositing a n-type layer on the i-layerwherein the second sub-p-layer is deposited onto the transparent conducting oxide layer at about 70°
C. and at a thickness in the range of about 0.005 microns to about 0.02 microns, and wherein the first sub-p-layer is deposited onto the second sub-p-layer at about 140°
C. and at a thickness in the range of about 0.001 microns to about 0.004 microns.
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Abstract
A novel photovoltaic solar cell and method of making the same are disclosed. The solar cell includes: at least one absorber layer which could either be a lightly doped layer or an undoped layer, and at least a doped window-layers which comprise at least two sub-window-layers. The first sub-window-layer, which is next to the absorber-layer, is deposited to form desirable junction with the absorber-layer. The second sub-window-layer, which is next to the first sub-window-layer, but not in direct contact with the absorber-layer, is deposited in order to have transmission higher than the first-sub-window-layer.
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Citations
27 Claims
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1. A method for manufacturing a solar cell comprising the steps of:
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(i) providing a transparent substrate; (ii) depositing a transparent conducting oxide layer on the transparent substrate; (iii) depositing a second sub-p-layer on the transparent conducting oxide layer at a second temperature; (iv) depositing a first sub-p-layer on the second sub-p-layer at a first temperature that is different from the second temperature; (v) depositing an i-layer on the first sub-p-layer; and (vi) depositing a n-type layer on the i-layer wherein the second sub-p-layer is deposited onto the transparent conducting oxide layer at about 70°
C. and at a thickness in the range of about 0.005 microns to about 0.02 microns, and wherein the first sub-p-layer is deposited onto the second sub-p-layer at about 140°
C. and at a thickness in the range of about 0.001 microns to about 0.004 microns. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13)
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14. A method for manufacturing a solar cell comprising the steps of:
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(i) providing a transparent substrate; (ii) depositing a transparent conducting oxide layer on the transparent substrate; (iii) depositing a second sub-p-layer on the transparent conducting oxide layer at a second temperature; (iv) depositing a first sub-p-layer on the second sub-p-layer at a first temperature that is different from the second temperature, wherein the second sub-p-layer is formed from the same material as the first sub-p-layer; (v) depositing an i-layer on the first sub-p-layer; and (vi) depositing a n-type layer on the i-layer wherein the second temperature is about 70°
C. and the first temperature is about 140°
C. - View Dependent Claims (15, 16, 17, 18, 19)
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20. A method for manufacturing a solar cell comprising:
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(i) providing a transparent substrate; (ii) depositing a transparent conducting oxide layer on the transparent substrate; (iii) depositing a second sub-p-layer comprised of nano-crystalline silicon on the transparent conducting oxide layer at a second temperature; (iv) depositing a first sub-p-layer comprised of nano-crystalline silicon on the second sub-p-layer at a first temperature that is different from the second temperature; (v) depositing an i-layer on the first sub-p-layer; and (vi) depositing an n-type layer on the i-layer wherein the second temperature is about 70°
C. and the first temperature is about 140°
C. - View Dependent Claims (21, 22, 23, 24, 25, 26)
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27. A method for manufacturing a solar cell comprising:
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(i) providing a transparent substrate; (ii) depositing a transparent conducting oxide layer on the transparent substrate; (iii) depositing a second sub-p-layer comprised of nano-crystalline silicon on the transparent conducting oxide layer at a second temperature; (iv) depositing a first sub-p-layer comprised of nano-crystalline silicon on the second sub-p-layer at a first temperature that is different from the second temperature; (v) depositing an i-layer on the first sub-p-layer; and (vi) depositing an n-type layer on the i-layer; wherein the second sub-p-layer is deposited onto the transparent conducting oxide layer at about 70°
C. and at a thickness in the range of about 0.005 microns to about 0.02 microns, andwherein the first sub-p-layer is deposited onto the second sub-p-layer at about 140°
C. and at a thickness in the range of about 0.001 microns to about 0.004 microns.
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Specification