Method for manufacturing an electro-optical device or electroluminescence display device
First Claim
Patent Images
1. A light emitting device comprising:
- a substrate;
a thin film transistor over the substrate;
a first insulating film comprising an organic resin over the thin film transistor;
a second insulating film formed over the first insulating film, the second insulating film comprising at least one selected from the group consisting of silicon nitride, aluminum oxide, aluminum nitride, nitrated aluminum oxide and diamond like carbon;
a first electrode electrically connected to the thin film transistor, over the second insulating film;
a bank over the second insulating film, the bank covering an edge of the first electrode;
an EL layer disposed adjacent to a side edge of the bank, over the first electrode;
a second electrode covering the bank and the EL layer; and
a third insulating film covering the second electrode,wherein the EL layer does not extend beyond the side edge of the bank, andwherein the third insulating film comprises silicon nitride oxide film or a silicon nitride film.
0 Assignments
0 Petitions
Accused Products
Abstract
An object of the present invention is to provide an EL display device having high operation performance and reliability.
A third passivation film 45 is disposed under the EL element 203 comprising a pixel electrode (anode) 46, an EL layer 47 and a cathode 48, and diffusion of alkali metals from the EL element 203 formed by ink jet method into TFTs is prevented. Further, the third passivation film 45 prevents penetration of moisture and oxygen from the TFTs, and suppress degradation of the EL element 203 by dispersing the heat generated by the EL element 203.
215 Citations
12 Claims
-
1. A light emitting device comprising:
-
a substrate; a thin film transistor over the substrate; a first insulating film comprising an organic resin over the thin film transistor; a second insulating film formed over the first insulating film, the second insulating film comprising at least one selected from the group consisting of silicon nitride, aluminum oxide, aluminum nitride, nitrated aluminum oxide and diamond like carbon; a first electrode electrically connected to the thin film transistor, over the second insulating film; a bank over the second insulating film, the bank covering an edge of the first electrode; an EL layer disposed adjacent to a side edge of the bank, over the first electrode; a second electrode covering the bank and the EL layer; and a third insulating film covering the second electrode, wherein the EL layer does not extend beyond the side edge of the bank, and wherein the third insulating film comprises silicon nitride oxide film or a silicon nitride film. - View Dependent Claims (2)
-
-
3. A light emitting device comprising:
-
a substrate; a thin film transistor over the substrate; a first insulating film comprising an organic resin over the thin film transistor; a second insulating film formed over the first insulating film, the second insulating film comprising at least one selected from the group consisting of silicon nitride, aluminum oxide, aluminum nitride, nitrated aluminum oxide and diamond like carbon; a first electrode electrically connected to the thin film transistor, over the second insulating film; a bank over the second insulating film, the bank covering an edge of the first electrode; an EL layer disposed adjacent to a side edge of the bank, over the first electrode; a second electrode covering the bank and the EL layer; and a third insulating film covering the second electrode, wherein a side surface of the bank is in contact with a side edge of the EL layer, and wherein the EL layer does not extend beyond the side edge of the bank. - View Dependent Claims (4)
-
-
5. A light emitting device comprising:
-
a substrate; a thin film transistor over the substrate; a first insulating film comprising an organic resin over the thin film transistor; a second insulating film formed over the first insulating film, the second insulating film comprising at least one selected from the group consisting of silicon nitride, aluminum oxide, aluminum nitride, nitrated aluminum oxide and diamond like carbon; a first electrode electrically connected to the thin film transistor, over the second insulating film; a bank over the second insulating film, the bank covering an edge of the first electrode; an EL layer disposed adjacent to a side edge of the bank, over the first electrode; a second electrode covering the bank and the EL layer; and a third insulating film covering the second electrode, wherein the EL layer does not extend beyond the side edge of the bank. - View Dependent Claims (6)
-
-
7. A light emitting device comprising:
-
a substrate; a thin film transistor over the substrate; a first insulating film comprising an organic resin over the thin film transistor; a second insulating film formed over the first insulating film, the second insulating film comprising at least one selected from the group consisting of silicon nitride, aluminum oxide, aluminum nitride, nitrated aluminum oxide and diamond like carbon; a first electrode electrically connected to the thin film transistor, over the second insulating film; a bank over the second insulating film, the bank covering an edge of the first electrode; an EL layer disposed adjacent to a side edge of the bank, over the first electrode; a second electrode covering the bank and the EL layer; and a third insulating film covering the second electrode, wherein the EL layer comprises at least one layer selected from the group consisting of a light emitting layer, a hole injecting layer, a hole transporting layer, an electron injecting layer, and an electron transporting layer, and wherein the EL layer does not extend beyond the side edge of the bank, and wherein the third insulating film comprises silicon nitride oxide film or a silicon nitride film. - View Dependent Claims (8)
-
-
9. A light emitting device comprising:
-
a substrate; a thin film transistor over the substrate; a first insulating film comprising an organic resin over the thin film transistor; a second insulating film formed over the first insulating film, the second insulating film comprising at least one selected from the group consisting of silicon nitride, aluminum oxide, aluminum nitride, nitrated aluminum oxide and diamond like carbon; a first electrode electrically connected to the thin film transistor, over the second insulating film; a bank over the second insulating film, the bank covering an edge of the first electrode; an EL layer disposed adjacent to a side edge of the bank, over the first electrode; a second electrode covering the bank and the EL layer; and a third insulating film covering the second electrode, wherein the EL layer comprises at least one layer selected from the group consisting of a light emitting layer, a hole injecting layer, a hole transporting layer, an electron injecting layer, and an electron transporting layer, wherein a side surface of the bank is in contact with a side edge of the EL layer, and wherein the EL layer does not extend beyond the side edge of the bank. - View Dependent Claims (10)
-
-
11. A light emitting device comprising:
-
a substrate; a thin film transistor over the substrate; a first insulating film comprising an organic resin over the thin film transistor; a second insulating film formed over the first insulating film, the second insulating film comprising at least one selected from the group consisting of silicon nitride, aluminum oxide, aluminum nitride, nitrated aluminum oxide and diamond like carbon; a first electrode electrically connected to the thin film transistor, over the second insulating film; a bank over the second insulating film, the bank covering an edge of the first electrode; an EL layer disposed adjacent to a side edge of the bank, over the first electrode; a second electrode covering the bank and the EL layer; and a third insulating film covering the second electrode, wherein the EL layer comprises at least one layer selected from the group consisting of a light emitting layer, a hole injecting layer, a hole transporting layer, an electron injecting layer, and an electron transporting layer, and wherein the EL layer does not extend beyond the side edge of the bank. - View Dependent Claims (12)
-
Specification