Integrated circuit device with a semiconductor body and method for the production of an integrated circuit device

• US 7,880,226 B2
• Filed: 01/25/2008
• Issued: 02/01/2011
• Est. Priority Date: 12/17/2007
• Status: Active Grant

• Current Assignee: Infineon Technologies Austria Ag (Infineon Technologies AG)
• Original Assignee: Infineon Technologies Austria Ag (Infineon Technologies AG)
• Inventors: Roesch, Maximilian, Blank, Oliver, Hiller, Uli, Siemieniec, Ralf
• Primary Examiner(s): WOJCIECHOWICZ, EDWARD JOSEPH
• Application Number:
  US12/020,077
• Publication Number:
  US 20090152624A1
• Time in Patent Office: 1,103 Days
• Field of Search: 257/330, 257/394, 257/397, 257/399, 257/401, 257/466
• US Class Current: 257/330
• CPC Class Codes: H01L 21/2815 part or whole of the electrode is a sidewall spacer or made by a similar technique, e.g. transformation under mask, plating
• CPC Class Codes: H01L 29/0615 by the doping profile or the shape or the arrangement of the PN junction, or with supplementary regions, e.g. junction termination extension [JTE] LDD or drain offset regions H01L29/7833
• CPC Class Codes: H01L 29/0638 for preventing surface leakage due to surface inversion layer, e.g. with channel stopper channel stoppers in combination with isolation region for integrated circuits H01L21/762
• CPC Class Codes: H01L 29/0696 of cellular field-effect devices, e.g. multicellular DMOS transistors or IGBTs
• CPC Class Codes: H01L 29/402 Field plates
• CPC Class Codes: H01L 29/407 Recessed field plates, e.g. trench field plates, buried field plates
• CPC Class Codes: H01L 29/41766 with at least part of the source or drain electrode having contact below the semiconductor surface, e.g. the source or drain electrode formed at least partially in a groove or with inclusions of conductor inside the semiconductor H01L29/41733 - H01L29/41758 take precedence
• CPC Class Codes: H01L 29/4236 within a trench, e.g. trench gate electrode, groove gate electrode
• CPC Class Codes: H01L 29/42368 the thickness being non-uniform
• CPC Class Codes: H01L 29/42376 characterised by the length or the sectional shape
• CPC Class Codes: H01L 29/66734 with a step of recessing the gate electrode, e.g. to form a trench gate electrode
• CPC Class Codes: H01L 29/7811 with an edge termination structure guard regions per se H01L29/0619; field plates per se H01L29/402
• CPC Class Codes: H01L 29/7813 with trench gate electrode, e.g. UMOS transistors trench gate electrodes per se H01L29/4236

Abstract

An integrated circuit device with a semiconductor body and a method for the production of a semiconductor device a provided. The semiconductor body comprises a cell field with a drift zone of a first conduction type. In addition, the semiconductor device comprises an edge region surrounding the cell field. Field plates with a trench gate structure are arranged in the cell field, and an edge trench surrounding the cell field is provided in the edge region. The front side of the semiconductor body is in the edge region provided with an edge zone of a conduction type complementing the first conduction type with doping materials of body zones of the cell field. The edge zone of the complementary conduction type extends both within and outside the edge trench.

Claims

1. An integrated circuit device, comprising:

a semiconductor body having a first conduction type;

a cell field including a drift zone of the first conduction type and body zones;

an edge region surrounding the cell field;

a trench structure including field plates with a trench gate structure in the cell field and an edge trench surrounding the cell field in the edge region; and

an edge zone of a conduction type complementing the first conduction type and with doping material of the same conduction type as the body zones of the cell field, the edge zone of the complementary conduction type extending on either side of the edge trench such that the edge zone extends into both the cell field and the edge region so as to form a p-n junction between the edge zone and the edge region;

wherein the field plates of the trench structure in the cell field are at source potential and vertical trench gate structures surround each of the field plates and are insulated from the field plates with a gate oxide situated between the trench gate structures and the body zone.

2. The integrated circuit device of claim 1, wherein the edge zone of the complementary conduction type is doped less highly than the body zones of the cell field.

3. The integrated circuit device of claim 1, wherein the penetration depth of the edge zone of the complementary conduction type is less than the penetration depth of the body zones in the cell field relative to a front side of the edge zone.

4. The integrated circuit device of claim 1, wherein the edge trench comprises a field plate at source potential, which is isolated from the surrounding semiconductor material of the semiconductor body by a field plate insulation.

5. The integrated circuit device of claim 1, wherein the edge trench divides the edge zone of the complementary conduction type into two zones, these being an inner edge zone between the cell field and the edge trench and an outer edge zone between the edge trench and a continuous annular channel stopper at drain potential surrounding the edge zone.

6. The integrated circuit device of claim 4, wherein a field oxide is located on the edge zone of the complementary conduction type, which comprises a smaller thickness than the field plate insulation of the edge trench and is covered by a further thicker oxide layer.

7. The integrated circuit device of claim 1, further comprising a channel stopper of polysilicon which surrounds the edge zone.

8. The integrated circuit device of claim 1, wherein the doping material profile of the edge zone of the complementary conduction type gradually increases from a p-n junction with the semiconductor body of the first conduction type located below to the field oxide on the front side of the semiconductor body.

9. The integrated circuit device of claim 1, wherein the trench structure of the cell field is strip-shaped in its lateral dimension.