Semiconductor light receiving device and method for manufacturing same

• US 7,880,254 B2
• Filed: 07/09/2008
• Issued: 02/01/2011
• Est. Priority Date: 07/09/2007
• Status: Expired due to Fees

• Current Assignee: Kabushiki Kaisha Toshiba (Toshiba Corporation)
• Original Assignee: Kabushiki Kaisha Toshiba (Toshiba Corporation)
• Inventors: Furuyama, Hideto
• Primary Examiner(s): Warren; Matthew E
• Application Number:
  US12/170,016
• Publication Number:
  US 20090020839A1
• Time in Patent Office: 937 Days
• Field of Search: 257431-434, 257/680, 257/E31.117, 257/E31.118, 257/E31.119, 257/E31.12, 257/E23.128, 257/E23.129, 257/E23.13, 257/E23.131
• US Class Current: 257/434
• CPC Class Codes: G02B 6/4212 the intermediate optical element being a coupling medium interposed therebetween, e.g. epoxy resin, refractive index matching material, index grease, matching liquid or gel
• CPC Class Codes: H01L 31/0203 Containers; Encapsulations , e.g. encapsulation of photodiodesfor photovoltaic devices H01L31/048; for organic photosensitive devices H10K30/80
• CPC Class Codes: H01L 31/02327 the optical elements being integrated or being directly associated to the device, e.g. back reflectors optical coatings H01L31/0216

Abstract

A semiconductor light receiving device includes a light receiving section made of a semiconductor provided on a substrate, an electrode provided on the substrate and configured to apply an electric field to the light receiving section, a resin layer provided above the substrate, the resin layer having an inverted conical opening, the inverted conical opening being located above the light receiving section and having an opening diameter which is smaller than the light receiving section in the vicinity of the light receiving section, is continuously enlarged with the distance from the substrate, and is larger than the light receiving section at a surface of the resin layer, and a light reflecting film made of metal and provided on a bevel of the inverted conical opening, the light reflecting film being electrically isolated from the electrode by a gap formed between the light reflecting film and the electrode. At least a portion of the resin layer located in the gap has a light blocking property.

Claims

1. A semiconductor light receiving device comprising:

a light receiving section made of a semiconductor provided on a substrate;

an electrode provided on the substrate and configured to apply an electric field to the light receiving section;

a resin layer provided above the substrate, the resin layer having an inverted conical opening, the inverted conical opening being located above the light receiving section and having an opening diameter which is smaller than the light receiving section in the vicinity of the light receiving section, is continuously enlarged with the distance from the substrate, and is larger than the light receiving section at a surface of the resin layer; and

a light reflecting film made of metal and provided on a bevel of the inverted conical opening, the light reflecting film being electrically isolated from the electrode by a gap formed between the light reflecting film and the electrode,

at least a portion of the resin layer located in the gap having a light blocking property.

2. The semiconductor light receiving device of claim 1, wherein the resin layer is entirely made of an opaque resin.

3. The semiconductor light receiving device of claim 1, wherein a light blocking layer is provided under the resin layer at least in the portion of the resin layer located in the gap.

4. The semiconductor light receiving device of claim 1, wherein the inside of the inverted conical opening is a void.

5. The semiconductor light receiving device of claim 1, wherein the inside of the inverted conical opening is filled with a transparent resin.

6. The semiconductor light receiving device of claim 5, wherein the transparent resin has a refractive index close to the transmission refractive index of an optical waveguide coupled to the inverted conical opening.

7. The semiconductor light receiving device of claim 1, further comprising:

an anti-reflection coating film provided on a surface of the light receiving section.

8. The semiconductor light receiving device of claim 1, wherein the light reflecting film is not in contact with a surface of the light receiving section, and at least part of the portion of the resin layer is provided in a gap formed between the light reflecting film and the surface of the light receiving section.

9. The semiconductor light receiving device of claim 7, wherein the refractive index of the anti-reflection coating film is the square root of the product of the refractive index of the semiconductor of the light receiving section and the refractive index of a medium outside the anti-reflection coating film.

10. The semiconductor light receiving device of claim 7, wherein the anti-reflection coating film is a conductive transparent film, the anti-reflection coating film is connected to the electrode, and the anti-reflection coating film serves as an auxiliary electrode.

16. The semiconductor light receiving device of claim 5, wherein the transparent resin has a refractive index close to the transmission refractive index of an optical waveguide coupled to the inverted conical opening.

11. A semiconductor light receiving device comprising:

a light receiving section made of a semiconductor provided on a substrate;

an electrode provided on the substrate and configured to apply an electric field to the light receiving section;

a resin layer provided above the substrate, the resin layer having an inverted conical opening, the inverted conical opening being located above the light receiving section and having an opening diameter which is smaller than the light receiving section in the vicinity of the light receiving section, is continuously enlarged with the distance from the substrate, and is larger than the light receiving section at a surface of the resin layer; and

a light reflecting film made of metal and provided on a bevel of the inverted conical opening, the light reflecting film being electrically isolated from the electrode by a gap formed between the light reflecting film and the electrode,

a light being blocked from being incident on the substrate except the light receiving section.

12. The semiconductor light receiving device of claim 11, wherein the resin layer is entirely made of an opaque resin.

13. The semiconductor light receiving device of claim 11, wherein a light blocking layer is provided under the resin layer at least in the portion of the resin layer located in the gap.

14. The semiconductor light receiving device of claim 11, wherein the inside of the inverted conical opening is a void.

15. The semiconductor light receiving device of claim 11, wherein the inside of the inverted conical opening is filled with a transparent resin.

17. The semiconductor light receiving device of claim 11, further comprising:

an anti-reflection coating film provided on a surface of the light receiving section.

18. The semiconductor light receiving device according to claim 11, wherein the light reflecting film is not in contact with a surface of the light receiving section, and at least part of the portion of the resin layer is provided in a gap formed between the light reflecting film and the surface of the light receiving section.

19. The semiconductor light receiving device of claim 17, wherein the refractive index of the anti-reflection coating film is the square root of the product of the refractive index of the semiconductor of the light receiving section and the refractive index of a medium outside the anti-reflection coating film.

20. The semiconductor light receiving device of claim 17, wherein the anti-reflection coating film is a conductive transparent film, the anti-reflection coating film is connected to the electrode, and the anti-reflection coating film serves as an auxiliary electrode.