Enhancement-mode field effect transistor based electrostatic discharge protection circuit
First Claim
1. An electrostatic discharge (ESD) clamp circuit comprising:
- a first terminal;
a second terminal having a first voltage with respect to a voltage at the first terminal, such that the first terminal and the second terminal are coupled between an ESD protected circuit and a direct current (DC) reference;
a first enhancement-mode field effect transistor (FET) element formed using a compound semiconductor material and comprising;
a first drain coupled to the first terminal;
a first source coupled to the second terminal; and
a first gate;
a first resistive element coupled between the first gate and the second terminal, wherein when the first voltage exceeds a first threshold, the ESD clamp circuit is in a clamping state; and
a plurality of resistive elements comprising the first resistive element,wherein the first enhancement-mode FET element further comprises a multiple gate enhancement-mode FET element having a plurality of gates comprising the first gate, such that each of the plurality of resistive elements is coupled between a corresponding each of the plurality of gates and the second terminal.
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Accused Products
Abstract
The present invention relates to an electrostatic discharge (ESD) clamp circuit that is used to protect other circuitry from high voltage ESD events. The ESD clamp circuit may include a field effect transistor (FET) element as a clamping element, which is triggered by using a drain-to-gate capacitance, a drain-to-gate resistance, or both of the FET element, and a resistive element as a voltage divider to divide down an ESD voltage to provide a triggering gate voltage of the FET element. In its simplest embodiment, the ESD clamp circuit includes only an FET element and a resistive element. Therefore, the single FET element ESD clamp circuit may be small compared to other ESD protection circuits. The simplicity of the ESD clamp circuit may minimize parasitic capacitances, thereby maximizing linearity of the ESD clamp circuit over a wide frequency range.
25 Citations
20 Claims
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1. An electrostatic discharge (ESD) clamp circuit comprising:
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a first terminal; a second terminal having a first voltage with respect to a voltage at the first terminal, such that the first terminal and the second terminal are coupled between an ESD protected circuit and a direct current (DC) reference; a first enhancement-mode field effect transistor (FET) element formed using a compound semiconductor material and comprising; a first drain coupled to the first terminal; a first source coupled to the second terminal; and a first gate; a first resistive element coupled between the first gate and the second terminal, wherein when the first voltage exceeds a first threshold, the ESD clamp circuit is in a clamping state; and a plurality of resistive elements comprising the first resistive element, wherein the first enhancement-mode FET element further comprises a multiple gate enhancement-mode FET element having a plurality of gates comprising the first gate, such that each of the plurality of resistive elements is coupled between a corresponding each of the plurality of gates and the second terminal. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13, 14)
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15. An electrostatic discharge (ESD) clamp circuit comprising:
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a first terminal; a second terminal having a first voltage with respect to a voltage at the first terminal, such that the first terminal and the second terminal are coupled between an ESD protected circuit and a direct current (DC) reference; a first enhancement-mode field effect transistor (FET) element formed using a compound semiconductor material and comprising; a first drain coupled to the first terminal; a first source coupled to the second terminal; and a first gate; a first resistive element coupled between the first gate and the second terminal, wherein when the first voltage exceeds a first threshold, the ESD clamp circuit is in a clamping state; and a plurality of resistive elements comprising the first resistive element, wherein the first enhancement-mode FET element further comprises a multiple gate enhancement-mode pseudomorphic high electron mobility transistor (pHEMT) element having a plurality of gates comprising the first gate, such that each of the plurality of resistive elements is coupled between a corresponding each of the plurality of gates and the second terminal.
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16. An electrostatic discharge (ESD) clamp circuit comprising:
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a first terminal; a second terminal having a first voltage with respect to a voltage at the first terminal, such that the first terminal and the second terminal are coupled between an ESD protected circuit and a direct current (DC) reference; a first enhancement-mode field effect transistor (FET) element formed using a compound semiconductor material and comprising; a first drain coupled to the first terminal; a first source coupled to the second terminal; and a first gate; a first resistive element coupled between the first gate and the second terminal, wherein when the first voltage exceeds a first threshold, the ESD clamp circuit is in a clamping state; a plurality of enhancement-mode FET pseudomorphic high electron mobility transistor (pHEMT) elements; comprising the first enhancement-mode FET element; comprising a plurality of gates comprising the first gate; and such that each of the plurality of enhancement-mode pHEMT elements is coupled in series to form a chain having the first drain at one end of the chain and a second source at another end of the chain, wherein the second source is coupled to the second terminal; and a plurality of resistive elements comprising the first resistive element, such that each of the plurality of resistive elements is coupled between a corresponding each of the plurality of gates and the second terminal. - View Dependent Claims (17, 18)
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19. An electrostatic discharge (ESD) clamp circuit comprising:
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a first terminal; a second terminal having a first voltage with respect to a voltage at the first terminal, such that the first terminal and the second terminal are coupled between an ESD protected circuit and a direct current (DC) reference; a first enhancement-mode field effect transistor (FET) element formed using a compound semiconductor material and comprising; a first drain coupled to the first terminal; a first source coupled to the second terminal; and a first gate; and a first resistive element coupled between the first gate and the second terminal, wherein when the first voltage exceeds a first threshold, the ESD clamp circuit is in a clamping state; and wherein the ESD protected circuit is fed from a complementary metal oxide semiconductor (CMOS) controller power supply and the first terminal and the second terminal are coupled between the CMOS controller power supply and the DC reference.
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20. An electrostatic discharge (ESD) clamp circuit comprising:
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a first terminal; a second terminal having a first voltage with respect to a voltage at the first terminal, such that the first terminal and the second terminal are coupled between an ESD protected circuit and a direct current (DC) reference; a first enhancement-mode field effect transistor (FET) element formed using a compound semiconductor material and comprising; a first drain coupled to the first terminal; a first source coupled to the second terminal; and a first gate; a first resistive element coupled between the first gate and the second terminal, wherein when the first voltage exceeds a first threshold, the ESD clamp circuit is in a clamping state; a plurality of enhancement-mode FET elements; comprising the first enhancement-mode FET element; a plurality of gates comprising the first gate; and such that each of the plurality of enhancement-mode FET elements is coupled in series to form a chain having the first drain at one end of the chain and a second source at another end of the chain, wherein the second source is coupled to the second terminal; and a plurality of resistive elements comprising the first resistive element, such that each of the plurality of resistive elements is coupled between a corresponding each of the plurality of gates and the second terminal.
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Specification