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Asymmetric write current compensation using gate overdrive for resistive sense memory cells

  • US 7,881,095 B2
  • Filed: 11/12/2008
  • Issued: 02/01/2011
  • Est. Priority Date: 08/08/2008
  • Status: Active Grant
First Claim
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1. An apparatus comprising:

  • a resistive sense memory (RSM) cell comprising an RSM element coupled to a switching device, the switching device comprising a plurality of terminals; and

    a control circuit which compensates for asymmetric write characteristics of the RSM cell by limiting a range of voltage differentials across said terminals to be equal to or less than a magnitude of a source voltage applied to the switching device to provide bi-directional write currents of substantially equal magnitude through the RSM element.

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