Use of a titanium-copper-nickel-based alloy

• US 7,883,744 B2
• Filed: 10/21/2005
• Issued: 02/08/2011
• Est. Priority Date: 11/05/2004
• Status: Active Grant

• Current Assignee: HEF USA
• Original Assignee: HEF USA
• Inventors: Martin, Michel, Faverjon, Frederic
• Primary Examiner(s): Ahmed; Shamim
• Application Number:
  US11/718,426
• Publication Number:
  US 20070297933A1
• Time in Patent Office: 1,936 Days
• Field of Search: 427/248.1, 427/404, 428/40.1, 428/42.2, 359/507, 359/883
• US Class Current: 427/248.1
• CPC Class Codes: C22C 14/00 Alloys based on titanium
• CPC Class Codes: C23C 14/205 by cathodic sputtering
• CPC Class Codes: Y10T 428/14 Layer or component removable to expose adhesive
• CPC Class Codes: Y10T 428/149 Sectional layer removable

Abstract

A titanium-copper-nickel based alloy is used for the formation of at least one resistive thin film on a polymer substrate. The alloy comprises 50 to 80% by weight of titanium, 10 to 25% by weight of copper and 10 to 25% by weight of nickel. The thin film has a thickness between about 100 and 160 nanometres.

Claims

1. A method for forming a resistive thin film on a polymer substrate, comprising applying to said polymer substrate a titanium-copper-nickel based alloy comprising 50 to 80% by weight of titanium, 10 to 25% by weight of copper and 10 to 25% by weight of nickel, wherein the thickness of the thin film is between about 100 and 160 nanometres and whereby said resistive thin film exhibits electrical resistivity at a voltage between 12 volts and 48 volts.

2. A method according to claim 1, wherein the alloy is applied to the substrate by vapour deposition.

3. A method according to claim 1, wherein the alloy comprises 69% by weight of titanium, 15.5% by weight of copper and 15.5% by weight of nickel.

4. A method according to claim 1, wherein the substrate constitutes a surface whereof a side opposite to a side coated with the resistive film containing the titanium-copper-nickel alloy, is coated with a reflecting film, and the resistive film is subjected to a power source to subject the resistive film to a voltage of about 12V.