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Method of fabricating oxide semiconductor device

  • US 7,883,934 B2
  • Filed: 02/19/2010
  • Issued: 02/08/2011
  • Est. Priority Date: 09/06/2005
  • Status: Expired due to Fees
First Claim
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1. A method for fabricating a device using an oxide semiconductor, the method comprising:

  • forming an oxide semiconductor on a substrate; and

    changing a conductivity of a predetermined region of the oxide semiconductor by irradiating the predetermined region with an energy ray,wherein the changing of the conductivity of the predetermined region is performed to increase the conductivity thereof by irradiating the predetermined region with a particle beam.

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