Method of controlling film uniformity and composition of a PECVD-deposited A-SiNx : H gate dielectric film deposited over a large substrate surface
First Claim
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1. A method of PECVD depositing an a-SiNx:
- H gate dielectric film, to provide an increase in film density and film thickness uniformity across a substrate surface area larger than 100 cm×
100 cm, while maintaining an atomic % of SiH bonded structure of less than about 15%, said method comprising;
providing said substrate having a surface area larger than 100 cm×
100 cm within a PECVD processing chamber; and
depositing said a-SiNx;
H gate dielectric film over said substrate from a precursor gas composition including N2, NH3, SiH4, and H2, wherein H2 is provided to said processing chamber in an amount such that a component ratio of NH3;
H2 in said plasma precursor gas composition ranges from about 0.5;
1 to about 3;
1.
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Abstract
We have discovered that adding H2 to a precursor gas composition including SiH4, NH3, and N2 is effective at improving the wet etch rate and the wet etch rate uniformity across the substrate surface of a-SiNx:H films which are deposited on a substrate by PECVD. Wet etch rate is an indication of film density. Typically, the lower the wet etch rate, the denser the film. The addition of H2 to the SiH4/NH3/N2 precursor gas composition did not significantly increase the variation in deposited film thickness across the surface of the substrate. The uniformity of the film across the substrate enables the production of flat panel displays having surface areas of 25,000 cm2 and larger.
26 Citations
20 Claims
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1. A method of PECVD depositing an a-SiNx:
- H gate dielectric film, to provide an increase in film density and film thickness uniformity across a substrate surface area larger than 100 cm×
100 cm, while maintaining an atomic % of SiH bonded structure of less than about 15%, said method comprising;providing said substrate having a surface area larger than 100 cm×
100 cm within a PECVD processing chamber; anddepositing said a-SiNx;
H gate dielectric film over said substrate from a precursor gas composition including N2, NH3, SiH4, and H2, wherein H2 is provided to said processing chamber in an amount such that a component ratio of NH3;
H2 in said plasma precursor gas composition ranges from about 0.5;
1 to about 3;
1. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13, 14, 15, 16, 17, 19)
- H gate dielectric film, to provide an increase in film density and film thickness uniformity across a substrate surface area larger than 100 cm×
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18. A PECVD apparatus which includes instructions for depositing an a-SiNx:
- H gate dielectric film having an atomic % of SiH bonded structure of less than about 15%, according to a method comprising;
providing a substrate having a surface area larger than about 1000 mm×
1000 mm within a PECVD processing chamber;
depositing said a-SiNx;
H dielectric film from a precursor gas composition including N2, NH3, SiH4, and H2, wherein H2 is provided to said processing chamber in an amount such that a component ratio of NH3;
H2 in said plasma precursor gas composition ranges from about 0.5;
1 to about 3;
1. - View Dependent Claims (20)
- H gate dielectric film having an atomic % of SiH bonded structure of less than about 15%, according to a method comprising;
Specification