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Thin-film device and method of fabricating the same

  • US 7,884,360 B2
  • Filed: 08/06/2007
  • Issued: 02/08/2011
  • Est. Priority Date: 08/09/2006
  • Status: Active Grant
First Claim
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1. A thin-film device including a first electrical insulator, an oxide-semiconductor film formed on said first electrical insulator, and a second electrical insulator formed on said oxide-semiconductor film,said oxide-semiconductor film defining an active layer,said oxide-semiconductor film being comprised of a first interface layer located at an interface with said first electrical insulator, a second interface layer located at an interface with said second electrical insulator, and a bulk layer other than said first and second interface layers,wherein oxygen hole densities in both of said first and second interface layers are smaller than a density of oxygen holes in said bulk layer.

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