Rules for efficient light sources using phosphor converted LEDs

• US 7,884,382 B2
• Filed: 02/22/2005
• Issued: 02/08/2011
• Est. Priority Date: 02/20/2004
• Status: Active Grant

• Current Assignee: GE Lighting Solutions LLC (Savant Systems, LLC)
• Original Assignee: GE Lighting Solutions LLC (Savant Systems, LLC)
• Inventors: Shiang, Josesph, Soules, Thomas, Becker, Charles Adrian, Weaver, Stanton Earl, Comanzo, Holly Ann, Duclos, Steven, Setlur, Anant A., Srivastava, Alok Mani
• Primary Examiner(s): MALSAWMA, LALRINFAMKIM HMAR
• Application Number:
  US10/590,262
• Publication Number:
  US 20080135860A1
• Time in Patent Office: 2,177 Days
• Field of Search: 257/98, 257/E33.067, 438/29
• US Class Current: 257/98
• CPC Class Codes: C09K 11/0883 Arsenides; Nitrides; Phosphides
• CPC Class Codes: C09K 11/616 with alkali or alkaline earth metals
• CPC Class Codes: C09K 11/7731 with alkaline earth metals
• CPC Class Codes: C09K 11/7734 Aluminates
• CPC Class Codes: C09K 11/7738 with alkaline earth metals
• CPC Class Codes: C09K 11/7739 with halogens
• CPC Class Codes: C09K 11/774 Borates
• CPC Class Codes: C09K 11/7768 with alkaline earth metals
• CPC Class Codes: C09K 11/7775 Germanates
• CPC Class Codes: C09K 11/778 Borates
• CPC Class Codes: C09K 11/7786 with alkaline earth metals
• CPC Class Codes: C09K 11/7787 Oxides C09K11/7785 takes precedence
• CPC Class Codes: C09K 11/7794 Vanadates; Chromates; Molybdates; Tungstates
• CPC Class Codes: H01L 33/502 Wavelength conversion materials
• CPC Class Codes: H01L 33/507 the elements being in intimate contact with parts other than the semiconductor body or integrated with parts other than the semiconductor body

Abstract

An LED lamp including an LED and one or more phosphors, wherein for each phosphor, a figure of merit (FOM) defined as the product of (incident LED flux)×(excitation cross-section of the phosphor)×(phosphor material decay time) is less than 0.3. Such an arrangement provides a light emitting device with improved lumen output and color stability over a range of drive currents.

Claims

1. A light emitting device comprising an LED and at least one phosphor materials, wherein a first phosphor material with a decay time of less than about 3 ms is positioned close to the LED and a second phosphor material with a relatively slower decay time is positioned relatively further from the LED, and wherein for each phosphor material, the product of (incident LED flux)×

(excitation cross-section of the phosphor)×

(phosphor material decay time) is less than 0.3.

2. The device of claim 1, wherein the LED is comprised of a semiconductor material.

3. The device of claim 1, wherein the LED emits light between 350 and 490 nm.

4. The device of claim 1, wherein the product is less than 0.1.

5. The device of claim 1, wherein each phosphor material provides Eu2+—

Mn2+ energy transfer.

6. The device of claim 1, wherein said first phosphor material includes at least one of Eu3+, Tb3+, Mn4+, Pr3+, Eu2+, or Ce3+.

7. The device of claim 6, wherein the second phosphor material is dispersed farther from the LED chip than the phosphor of claim 6 and wherein said second phosphor material has a slower decay time than the phosphor of claim 6.

8. The device of claim 1, wherein the second phosphor material is positioned remote to the LED.

9. The device of claim 1 having three or more phosphor layer.

10. The device of claim 9, wherein each phosphor layer in a direction outward from the LED has a longer decay time.

11. The device of claim 1 wherein said phosphor layers are comprised of one or more phosphor.

12. The device of claim 1 including a phosphor with a decay time less than about 1 ms and positioned relatively closer to the LED and a phosphor positioned farther away from the LED and having a decay time of greater than about 3 ms.

13. The device of claim 1, wherein Eu2+—

Mn2+ phosphors are used in the layers farther from the LED.

14. A method for producing a phosphor conversion LED lamp, the method comprising the steps of providing an LED chip and subsequently depositing at least one phosphor material over the LED chip, wherein a first phosphor material with a decay time of less than about 3 ms is positioned close to the LED and a second phosphor material with a relatively slower decay time is positioned relatively further from the LED, and wherein the phosphor materials are selected and deposited such that for each phosphor material, the product of (incident LED flux)×

(excitation cross-section of the phosphor)×

(phosphor material decay time) is less than 0.3.