Nonvolatile semiconductor storage device, and method for controlling nonvolatile semiconductor storage device
First Claim
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1. A nonvolatile semiconductor storage device comprising:
- a substrate;
a stacked portion that includes a plurality of conductor layers and a plurality of insulation layers alternately stacked on the substrate, at least one layer of the plurality of conductor layers and the plurality of insulation layers using a marker layer;
a charge accumulation film that is formed on an inner surface of a memory plug hole that is formed in the stacked portion from a top surface to a bottom surface thereof; and
a semiconductor pillar that is formed inside the memory plug hole through the charge accumulation film.
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Abstract
According to an aspect of the present invention, there is provided, a nonvolatile semiconductor storage device including: a substrate; a stacked portion that includes a plurality of conductor layers and a plurality of insulation layers alternately stacked on the substrate, at least one layer of the plurality of conductor layers and the plurality of insulation layers forming a marker layer; a charge accumulation film that is formed on an inner surface of a memory plug hole that is formed in the stacked portion from a top surface to a bottom surface thereof; and a semiconductor pillar that is formed inside the memory plug hole through the charge accumulation film.
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Citations
11 Claims
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1. A nonvolatile semiconductor storage device comprising:
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a substrate; a stacked portion that includes a plurality of conductor layers and a plurality of insulation layers alternately stacked on the substrate, at least one layer of the plurality of conductor layers and the plurality of insulation layers using a marker layer; a charge accumulation film that is formed on an inner surface of a memory plug hole that is formed in the stacked portion from a top surface to a bottom surface thereof; and a semiconductor pillar that is formed inside the memory plug hole through the charge accumulation film. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11)
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Specification