Semiconductor device including a transformer on chip

• US 7,884,444 B2
• Filed: 07/22/2008
• Issued: 02/08/2011
• Est. Priority Date: 07/22/2008
• Status: Active Grant

• Current Assignee: Infineon Technologies AG
• Original Assignee: Infineon Technologies AG
• Inventors: Strzalkowski, Bernhard
• Primary Examiner(s): Richards; N Drew
• Assistant Examiner(s): SUN, YU-HSI DAVID
• Application Number:
  US12/177,257
• Publication Number:
  US 20100019391A1
• Time in Patent Office: 931 Days
• Field of Search: 257/531, 257/677, 257/678, 257/685, 257/686, 257/690, 257/E21.022, 375/258, 363/16, 363/122, 326/30, 315/224
• US Class Current: 257/531
• CPC Class Codes: H01L 2224/023 Redistribution layers [RDL] for bonding areas
• CPC Class Codes: H01L 2224/05599 Material
• CPC Class Codes: H01L 2224/32145 the bodies being stacked
• CPC Class Codes: H01L 2224/32245 the item being metallic
• CPC Class Codes: H01L 2224/45014 Ribbon connectors, e.g. rectangular cross-section
• CPC Class Codes: H01L 2224/45099 Material
• CPC Class Codes: H01L 2224/48091 Arched
• CPC Class Codes: H01L 2224/48137 the bodies being arranged next to each other, e.g. on a common substrate
• CPC Class Codes: H01L 2224/48145 the bodies being stacked
• CPC Class Codes: H01L 2224/48247 connecting the wire to a bond pad of the item
• CPC Class Codes: H01L 2224/48472 the other connecting portion not on the bonding area also being a wedge bond, i.e. wedge-to-wedge
• CPC Class Codes: H01L 2224/49111 the connectors connecting two common bonding areas, e.g. Litz or braid wires
• CPC Class Codes: H01L 2224/49175 Parallel arrangements
• CPC Class Codes: H01L 2224/83825 Solid-liquid interdiffusion
• CPC Class Codes: H01L 2224/8384 Sintering
• CPC Class Codes: H01L 2224/8385 using a polymer adhesive, e.g. an adhesive based on silicone, epoxy, polyimide, polyester
• CPC Class Codes: H01L 23/495 Lead-frames or other flat leads H01L23/498 takes precedence; lead frame interconnections between components H01L23/52
• CPC Class Codes: H01L 23/49575 Assemblies of semiconductor devices on lead frames
• CPC Class Codes: H01L 23/5227 Inductive arrangements or effects of, or between, wiring layers other inductive arrangements H01L23/645
• CPC Class Codes: H01L 24/48 of an individual wire connector
• CPC Class Codes: H01L 24/49 : of a plurality of wire connectors
• CPC Class Codes: H01L 24/83 : using a layer connector
• CPC Class Codes: H01L 25/072 : the devices being arranged next to each other
• CPC Class Codes: H01L 25/16 : the devices being of types provided for in two or more different main groups of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. forming hybrid circuits
• CPC Class Codes: H01L 2924/00 : Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
• CPC Class Codes: H01L 2924/0001 : Technical content checked by a classifier
• CPC Class Codes: H01L 2924/00012 : Relevant to the scope of the group, the symbol of which is combined with the symbol of this group
• CPC Class Codes: H01L 2924/00014 : the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details
• CPC Class Codes: H01L 2924/01005 : Boron [B]
• CPC Class Codes: H01L 2924/01006 : Carbon [C]
• CPC Class Codes: H01L 2924/01014 : Silicon [Si]
• CPC Class Codes: H01L 2924/01027 : Cobalt [Co]
• CPC Class Codes: H01L 2924/01029 : Copper [Cu]
• CPC Class Codes: H01L 2924/01033 : Arsenic [As]
• CPC Class Codes: H01L 2924/01047 : Silver [Ag]
• CPC Class Codes: H01L 2924/0105 : Tin [Sn]
• CPC Class Codes: H01L 2924/01068 : Erbium [Er]
• CPC Class Codes: H01L 2924/01082 : Lead [Pb]
• CPC Class Codes: H01L 2924/014 : Solder alloys
• CPC Class Codes: H01L 2924/10253 : Silicon [Si]
• CPC Class Codes: H01L 2924/1301 : Thyristor
• CPC Class Codes: H01L 2924/1305 : Bipolar Junction Transistor [BJT]
• CPC Class Codes: H01L 2924/13055 : Insulated gate bipolar transistor [IGBT]
• CPC Class Codes: H01L 2924/13062 : Junction field-effect transistor [JFET]
• CPC Class Codes: H01L 2924/13091 : Metal-Oxide-Semiconductor Field-Effect Transistor [MOSFET]
• CPC Class Codes: H01L 2924/14 : Integrated circuits
• CPC Class Codes: H01L 2924/1461 : MEMS
• CPC Class Codes: H01L 2924/181 : Encapsulation
• CPC Class Codes: H01L 2924/19042 : being an inductor
• CPC Class Codes: H01L 2924/19043 : being a resistor
• CPC Class Codes: H01L 2924/19104 : on the semiconductor or solid-state device, i.e. passive-on-chip
• CPC Class Codes: H01L 2924/206 : Length ranges

Abstract

This application relates to a semiconductor device comprising a first chip comprising a first electrode on a first face of the first chip, and a second chip attached to the first electrode, wherein the second chip comprises a transformer comprising a first winding and a second winding.

Claims

1. A semiconductor device comprising:

a first chip comprising a first electrode on a first face of the first chip; and

a second chip attached to the first electrode, the second chip comprising a transformer comprising a first winding and a second winding,

a carrier comprising a first island to which the first chip is attached; and

a third chip attached to the carrier and electrically coupled to the first electrode of the first chip.

2. The semiconductor device according to claim 1 wherein the third chip comprises a first electrode on a first face of the third chip and a second electrode on a second face of the chip opposite to the first face.

3. The semiconductor device according to claim 2 further comprising a fourth chip attached to first electrode of the third chip.

4. The semiconductor device according to claim 2 further comprising a fourth chip attached to the carrier and electrically coupled to the first winding.

5. The semiconductor device according to claim 1 wherein the carrier comprises a second chip island to which the third chip is attached.

6. The semiconductor device according to claim 1 wherein the first chip and the third chip each comprise a power transistor.

7. The semiconductor device according to claim 6 wherein the power transistor of the first chip and the power transistor of the third chip form a half-bridge.