Waveguide to microstrip transducer having a ridge waveguide and an impedance matching box

• US 7,884,682 B2
• Filed: 11/27/2007
• Issued: 02/08/2011
• Est. Priority Date: 11/30/2006
• Status: Expired due to Fees

• Current Assignee: Hitachi, Ltd.
• Original Assignee: Hitachi, Ltd.
• Inventors: Nagaishi, Hideyuki, Shinoda, Hiroshi
• Primary Examiner(s): LEE, BENNY T
• Application Number:
  US11/945,329
• Publication Number:
  US 20080129409A1
• Time in Patent Office: 1,169 Days
• Field of Search: 333/26, 333/34, 333/35
• US Class Current: 333/26
• CPC Class Codes: H01P 5/107 Hollow-waveguide/strip-line transitions

Abstract

When a microstrip line is connected with a waveguide, there is a limit to reducing the connection loss by using only a matching box. We have discovered that in a transmission mode line transducer for converting between the TEM waves of the microstrip line and the TE01 waves of the waveguide, if the cross-sections of the microstrip line and the waveguide are substantially the same size, in the case of a 50Ω microstrip line when the characteristic impedance of the waveguide is about 80%, i.e., 40Ω, the line conversion loss can be optimized. Therefore, according to the present invention, the microstrip line is connected with the waveguide using a λ/4 matching box by means of a ridged waveguide having a low impedance and a length of λ/16 or less.

Claims

1. A waveguide structure comprising:

a microstrip line;

a waveguide; and

a transmission mode transducer provided between the microstrip line and the waveguide,

wherein the transmission mode transducer comprises a waveguide transducer,

wherein the waveguide transducer is a ridged waveguide,

wherein a characteristic impedance of the waveguide transducer is equal to or less than a characteristic impedance of the microstrip line,

wherein a length of a shorter side of a rectangular cross-section opening of the ridged waveguide is twice or more than twice a thickness of a dielectric of the microstrip line, and

wherein a ridge is provided near a center of one or both long sides of the ridged waveguide rectangular cross-sectional opening, projecting toward the center of the rectangular opening, wherein a distance from the ridge to the nearest part of the rectangular opening is twice or less than twice the thickness of the dielectric.

2. The waveguide structure according to claim 1,

wherein the ridged waveguide is formed of ridges projecting near a center of one or both long sides of the rectangular cross-sectional opening of the ridged waveguide, and the ridged waveguide having a characteristic impedance less than that the characteristic impedance of the microstrip line,

wherein the ridged waveguide is formed in a multilayer substrate of alternately laminated dielectric and metal conductor films,

wherein a length of a ridged section comprised of the ridges is λ

/4 or less from a face of the long sides of the rectangular cross-sectional opening of the ridged waveguide, and

wherein a plurality of electrically conducting vias are disposed in a projection direction in the multilayer substrate.

3. A waveguide structure comprising:

a microstrip line;

a waveguide; and

a transmission mode transducer provided between the microstrip line and the waveguide,

wherein the transmission mode transducer comprises a waveguide transducer,

wherein the waveguide transducer is a ridged waveguide,

wherein a characteristic impedance of the waveguide transducer is equal to or less than a characteristic impedance of the microstrip line, and

wherein a length of a shorter side of a rectangular cross-sectional opening of the ridged waveguide is twice or more than twice a thickness of a dielectric of the microstrip line,

the microstrip line further comprising;

an RF circuit; and

a λ

/4 matching box connected between the waveguide and the waveguide transducer,

wherein the waveguide structure constitutes input/output terminals for externally connecting the waveguide structure,

wherein the microstrip line constitutes a millimeter waveband data line of the RF circuit, and

wherein a characteristic impedance of the λ

/4 matching box is an intermediate value between the characteristic impedance of the microstrip line and a characteristic impedance of the waveguide.

4. The waveguide structure according to claim 3, further comprising:

a multilayer substrate;

an RF circuit board,

wherein the RF circuit is provided on a top layer of the RF circuit board and the multilayer substrate,

wherein the waveguide transducer and the λ

/4 matching box are provided in an inner layer of the multilayer substrate, and

wherein the transmission mode transducer connects the microstrip line to the waveguide transducer at a right angle.

5. A waveguide structure comprising:

a microstrip line;

a waveguide; and

a transmission mode transducer provided between the microstrip line and the waveguide,

wherein the transmission mode transducer comprises a waveguide transducer,

wherein the waveguide transducer is a ridged waveguide,

wherein a characteristic impedance of the waveguide transducer is equal to or less than a characteristic impedance of the microstrip line, and

wherein the microstrip line is connected to the waveguide transducer at a right angle,

the waveguide structure further comprising;

an RF circuit; and

a λ

/4 matching box connected between the waveguide and the waveguide transducer,

wherein the waveguide structure constitutes input/output terminals for externally connecting the waveguide structure,

wherein the microstrip line constitutes a millimeter waveband data line of the RF circuit, and

wherein a characteristic impedance of the λ

/4 matching box is an intermediate value between the characteristic impedance of the microstrip line and a characteristic impedance of the waveguide.

6. The waveguide structure according to claim 5, further comprising:

a multilayer substrate; and

an RF circuit board,

wherein the RF circuit is provided on a top layer of the RF circuit board and the multilayer substrate,

wherein the waveguide transducer and the λ

/4 matching box are provided in an inner layer of the multilayer substrate, and

wherein the transmission mode transducer connects the microstrip line to the waveguide transducer at a right angle.

7. The waveguide structure according to claim 5,

wherein the ridged waveguide is formed of ridges projecting near a center of one or both long sides of a rectangular cross-sectional opening of the ridged waveguide, and the ridged waveguide having a characteristic impedance less than that the characteristic impedance of the microstrip line,

wherein the ridged waveguide is formed in a multilayer substrate of alternately laminated dielectric and metal conductor films,

wherein a length of a ridged section comprised of the ridges is λ

/4 or less from a face of the long sides of the rectangular cross-sectional opening of the ridged waveguide, and

wherein a plurality of electrically conducting vias are disposed in a projection direction in the multilayer substrate.

8. A waveguide structure, comprising:

a multilayer substrate; and

a heat transfer plate laminated on the multilayer substrate;

wherein, on the multilayer substrate are provided, a microstrip line, a transmission mode transducer connected between the microstrip line and a waveguide, and a first λ

/4 matching box,

wherein the transmission mode transducer comprises a waveguide transducer,

wherein the waveguide transducer is a ridged waveguide,

wherein a characteristic impedance of the waveguide transducer of the transmission mode transducer is equal to or less than a characteristic impedance of the microstrip line,

wherein a characteristic impedance of the first λ

/4 matching box is a higher impedance than a characteristic impedance of the transmission mode transducer and the characteristic impedance of the microstrip line, and is a lower impedance than a characteristic impedance of the waveguide, and

wherein a second λ

/4 matching box of a conductive conductor, having a lower impedance than the characteristic impedance of the waveguide and a higher impedance than the characteristic impedance of the first λ

/4 matching box, is formed in the heat transfer plate.

9. The waveguide structure according to claim 8, wherein the first λ

/4 matching box is a tapered impedance matching box provided on the multilayer substrate.

10. A waveguide structure comprising:

a microstrip line;

a waveguide; and

a transmission mode transducer provided between the microstrip line and the waveguide,

wherein the transmission mode transducer comprises a waveguide transducer,

wherein the waveguide transducer is a ridged waveguide, and

wherein a characteristic impedance of the waveguide transducer is equal to or less than a characteristic impedance of the microstrip line,

the waveguide structure further comprising;

a multilayer substrate; and

an RF circuit board, an RF circuit being provided on a top layer of the RF circuit board and the multilayer substrate; and

a λ

/4 matching box provided adjacent to an inner layer of the multilayer substrate,

wherein the waveguide transducer and a waveguide of the λ

/4 matching box are of a waveguide shape extending through to an undersurface of the multilayer substrate by alternately laminated dielectric and metal conductor films, each metal conductor film having a cut-out portion and being electrically connected to an adjacent metal conductor film through at least one via.

11. The waveguide structure according to claim 10,

wherein a length of a shorter side of a rectangular cross-sectional opening of the ridged waveguide is twice or more than twice a thickness of a dielectric of the microstrip line, and

wherein a ridge is provided near a center of one or both long sides of the ridged waveguide rectangular cross-sectional opening, projecting toward the center of the rectangular opening, wherein a distance from the ridge to the nearest part of the rectangular opening is twice or less than twice the thickness of the dielectric.

12. The waveguide structure according to claim 10,

wherein the λ

/4 matching box is connected between the waveguide and the waveguide transducer,

wherein the waveguide structure constitutes input/output terminals for externally connecting the waveguide structure,

wherein the microstrip line constitutes a millimeter waveband data line of the RF circuit,

wherein a characteristic impedance of the λ

/4 matching box is an intermediate value between the characteristic impedance of the microstrip line and a characteristic impedance of the waveguide.

13. The waveguide structure according to claim 12, wherein the transmission mode transducer connects the microstrip line to the waveguide transducer at a right angle.

14. The waveguide structure according to claim 10, further comprising an impedance matching box having a characteristic impedance ratio of three or less at input and output terminals thereof, the impedance matching box being formed on the multilayer substrate,

wherein the impedance matching box is an impedance matching box formed on the multilayer substrate by a tapered artificial-waveguide having a length of λ

/4 or less, with a taper angle satisfying the relation tan(θ

)/(√

(Er))<

0.3, and having a reflection characteristic of −

10 dB or less, where θ

is the taper angle and Er is a dielectric constant of the multilayer substrate.

15. The waveguide structure according to claim 10,

wherein the ridged waveguide is formed of ridges projecting near a center of one or both long sides of a rectangular cross-sectional opening of the ridged waveguide, and the ridged waveguide having a characteristic impedance less than that the characteristic impedance of the microstrip line,

wherein a length of a ridged section comprised of the ridges is λ

/4 or less from a face of the long sides of the rectangular cross-sectional opening of the ridged waveguide, and

wherein the at least one via is disposed in a projection direction in the multilayer substrate.

16. A waveguide structure comprising:

a microstrip line;

a waveguide; and

a transmission mode transducer provided between the microstrip line and the waveguide,

wherein the transmission mode transducer comprises a waveguide transducer,

wherein the waveguide transducer is a ridged waveguide,

wherein a characteristic impedance of the waveguide transducer is equal to or less than a characteristic impedance of the microstrip line,

wherein the waveguide structure further comprises a λ

/4 matching box connected between the transmission mode transducer and the waveguide, and

wherein a characteristic impedance of the λ

/4 matching box is a higher impedance than the characteristic impedance of the transmission mode transducer and a characteristic impedance of the microstrip line, and is a lower impedance than a characteristic impedance of the waveguide.

17. The waveguide structure according to claim 16,

wherein a length of a shorter side of a rectangular cross-sectional opening of the ridged waveguide is twice or more than twice a thickness of a dielectric of the microstrip line, and

wherein a ridge is provided near a center of one or both long sides of the ridged waveguide rectangular cross-sectional opening, projecting toward the center of the rectangular opening, wherein a distance from the ridge to the nearest part of the rectangular opening is twice or less than twice the thickness of the dielectric.

18. The waveguide structure according to claim 16,

wherein the ridged waveguide is formed of ridges projecting near a center of one or both long sides of a rectangular cross-sectional opening of the ridged waveguide, and the ridged waveguide having a characteristic impedance less than that the characteristic impedance of the microstrip line,

wherein the ridged waveguide is formed in a multilayer substrate of alternately laminated dielectric and metal conductor films,

wherein a length of a ridged section comprised of the ridges is λ

/4 or less from a face of the long sides of the rectangular cross-sectional opening of the ridged waveguide, and

wherein a plurality of electrically conducting vias are disposed in a projection direction in the multilayer substrate.

19. The waveguide structure according to claim 16, further comprising:

an RF circuit; and

wherein the waveguide structure constitutes input/output terminals for externally connecting the waveguide structure, and

wherein the microstrip line constitutes a millimeter waveband data line of the RF circuit.

20. The waveguide structure according to claim 19, further comprising:

a multilayer substrate;

an RF circuit board,

wherein the RF circuit is provided on a top layer of the RF circuit board and the multilayer substrate,

wherein the waveguide transducer and the λ

/4 matching box are provided in an inner layer of the multilayer substrate, and

wherein the transmission mode transducer connects the microstrip line to the waveguide transducer at a right angle.