Compensating for coupling during programming
First Claim
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1. A method of programming non-volatile storage, comprising:
- programming non-volatile storage elements to a coarse verification level associated with a particular programmed state;
performing additional programming of a first subset of said non-volatile storage elements to a first fine final target level associated with said particular programmed state; and
performing additional programming of a second subset of said non-volatile storage elements to a second fine final target level associated with said particular programmed state.
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Abstract
Shifts in the apparent charge stored on a floating gate (or other charge storing element) of a non-volatile memory cell can occur because of the coupling of an electric field based on the charge stored in adjacent floating gates (or other adjacent charge storing elements). To compensate for this coupling, the read or programming process for a given memory cell can take into account the programmed state of an adjacent memory cell. To determine whether compensation is needed, a process can be performed that includes sensing information about the programmed state of an adjacent memory cell (e.g., on an adjacent bit line or other location).
140 Citations
25 Claims
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1. A method of programming non-volatile storage, comprising:
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programming non-volatile storage elements to a coarse verification level associated with a particular programmed state; performing additional programming of a first subset of said non-volatile storage elements to a first fine final target level associated with said particular programmed state; and performing additional programming of a second subset of said non-volatile storage elements to a second fine final target level associated with said particular programmed state. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9)
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10. A method of programming a set of non-volatile storage elements, comprising:
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programming a first subset of said non-volatile storage elements to a first programmed state using one coarse verification level with a first coarse programming process and two fine verification levels with a fine programming process; and programming additional subsets of non-volatile storage elements to additional programmed states using one coarse verification level for each additional programmed state with said first coarse programming process and one fine verification level for each additional programmed state with said fine programming process. - View Dependent Claims (11, 12, 13, 14, 15, 16)
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17. A method of programming a set of non-volatile storage elements, comprising:
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programming a first set of non-volatile storage elements to a particular programmed state using a particular final target level for said particular programmed state, said first set of non-volatile storage elements are adjacent to non-volatile storage elements that have been identified for programming to a different programmed state; and programming a second set of non-volatile storage elements to said particular programmed state using another final target level for said particular programmed state, said second set of non-volatile storage elements are not adjacent to non-volatile storage elements that have been identified for programming to said different programmed state. - View Dependent Claims (18, 19, 20, 21)
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22. A method of programming a set of non-volatile storage elements, comprising:
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programming a first set of non-volatile storage elements to a particular programmed state using a particular final target level for said particular programmed state, said first set of non-volatile storage elements are adjacent to additional non-volatile storage elements that have been identified for programming to a different programmed state; programming a second set of non-volatile storage elements to said particular programmed state using another final target level for said particular programmed state; and programming said additional non-volatile storage elements to said different programmed state using a different final target level. - View Dependent Claims (23, 24, 25)
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Specification