High sensitivity acoustic wave microsensors based on stress effects
First Claim
1. A system for acoustic sensing, comprising:
- a bridge structure coupled to a substrate about at least two sides of said bridge structure, wherein said bridge structure includes a piezoelectric section and has at least one acoustic wave device (AWD) proximate a portion of said bridge structure, said AWD includes an active acoustic region;
wherein a perturbation of said bridge structure produces stress effects measurable by said AWD;
wherein resonance of said AWD is independent of the intrinsic resonant flexural frequency of said bridge structure, and wherein said AWD is a bulk-generated acoustic wave (BGAW) device and operates by at least one of energy-trapping and thickness-resonance modes.
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Accused Products
Abstract
Acoustic sensing utilizing a bridge structure coupled about a portion of at least two sides of said bridge to a base substrate, wherein said bridge includes a piezoelectric section and has at least one active acoustic region proximate said bridge. A sensing material is disposed on at least a portion of at least one surface of the bridge, wherein the bridge produces stress effects measurable by an acoustic wave device located in the active acoustic region. According to one embodiment, the stress effects are measured by an acoustic wave device to sense a target matter. As target molecules accumulate on a sensing film affixed to at least a portion of the bridge, stress is produced in the bridge inducing a frequency change measured by an acoustic wave device.
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Citations
21 Claims
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1. A system for acoustic sensing, comprising:
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a bridge structure coupled to a substrate about at least two sides of said bridge structure, wherein said bridge structure includes a piezoelectric section and has at least one acoustic wave device (AWD) proximate a portion of said bridge structure, said AWD includes an active acoustic region;
wherein a perturbation of said bridge structure produces stress effects measurable by said AWD;wherein resonance of said AWD is independent of the intrinsic resonant flexural frequency of said bridge structure, and wherein said AWD is a bulk-generated acoustic wave (BGAW) device and operates by at least one of energy-trapping and thickness-resonance modes. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9)
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10. A method for detecting a target substance, comprising:
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forming a piezoelectric bridge having at least one acoustic wave device (AWD) disposed proximate a portion of said bridge, wherein resonance of said AWD is independent of the intrinsic resonant flexural frequency of said bridge, and said AWD is a bulk-generated acoustic wave (BGAW) device and operates by at least one of energy-trapping and thickness-resonance modes;
exposing said bridge to some environment;causing a stress response of said bridge from said environment; and detecting a response of said acoustic wave device to said bridge stress response. - View Dependent Claims (11, 12)
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13. A sensing device for measuring stress effects, comprising:
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a substrate having electrical connections disposed about said substrate and providing connectivity to an electrical energy source and a measurement device; a bridge structure coupled to said substrate on a portion of at least two sides of said bridge structure comprising; at least one acoustic wave device (AWD) formed proximate a portion of said bridge structure, said acoustic wave device comprising a piezoelectric section with at least two electrodes disposed thereon, wherein resonance of said AWD is independent of the intrinsic resonant flexural frequency of said bridge structure, and said AWD is a bulk-generated acoustic wave (BGAW) device and operates by at least one of energy-trapping and thickness-resonance modes, wherein a perturbation of said bridge structure causes a change in electrical properties of said acoustic wave device, said change in electrical properties modifying a signal from said electrical energy source in a manner that is measurable by said measurement device. - View Dependent Claims (14, 15, 16)
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17. A system for acoustic sensing, comprising:
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a bridge structure coupled to a substrate about a portion of at least two sides of said bridge structure, wherein said bridge structure includes a piezoelectric section and having at least one acoustic wave device (AWD) proximate a portion of said bridge structure, wherein said AWD includes an active acoustic region, wherein boundaries of said active acoustic region are decoupled from boundaries of said bridge structure; an electrical signal coupled to said bridge structure, wherein stresses induced in said bridge structure produce force-frequency effects measurable by said AWD; wherein said force-frequency effects induce modulation of said electrical signal; wherein resonance of said AWD is independent of the intrinsic resonant flexural frequency of said bridge structure, and said AWD is a bulk-generated acoustic wave (BGAW) device and operates by at least one of energy-trapping and thickness-resonance modes.
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18. A sensing device for measuring physical parameters, comprising:
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a substrate having electrical connections disposed about said substrate and providing connectivity to an electrical energy source and a measurement device; a bridge coupled to said substrate on a portion of at least two sides of said bridge, said bridge comprising; at least one acoustic wave device (AWD) formed proximate a portion of said bridge, said acoustic wave device comprising a piezoelectric section with at least two electrodes disposed thereon, wherein said bridge is responsive to stresses induced by application of a point force to said bridge, wherein a bridge stress response causes a change in electrical properties of said acoustic wave device, said change in electrical properties modifying a signal from said electrical energy source in a manner that is measurable by said measurement device, wherein resonance of said AWD is independent of the intrinsic resonant flexural frequency of said bridge structure, and said AWD is a bulk-generated acoustic wave (BGAW) device and operates by at least one of energy-trapping and thickness-resonance modes. - View Dependent Claims (19, 20, 21)
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Specification