Vacuum processing apparatus

• US 7,887,669 B2
• Filed: 03/07/2007
• Issued: 02/15/2011
• Est. Priority Date: 11/10/2006
• Status: Active Grant

• Current Assignee: Hitachi High-Tech Company Limited (Hitachi, Ltd.)
• Original Assignee: Hitachi High-Technologies Corporation (Hitachi, Ltd.)
• Inventors: Miya, Go, Akiyama, Hiroshi, Satou, Kouhei
• Primary Examiner(s): Cleveland; Michael
• Assistant Examiner(s): Chen; Keath T
• Application Number:
  US11/683,040
• Publication Number:
  US 20080110400A1
• Time in Patent Office: 1,441 Days
• Field of Search: 156/335.1, 156/345.1
• US Class Current: 156/345.1
• CPC Class Codes: H01J 37/3244 Gas supply means
• CPC Class Codes: H01J 37/32449 Gas control, e.g. control of the gas flow

Abstract

The invention provides a plasma processing apparatus for processing a wafer mounted on a sample stage placed in a vacuum processing chamber using a plasma generated in the vacuum chamber. The plasma processing apparatus comprises a plate placed in the vacuum processing vessel above and opposed to the wafer, the plate having a through hole through which a first processing gas is introduced; a first and second cylindrical member arranged vertically and adjacently; and means communicating with the gap between the first and second cylindrical member for supplying a second processing gas. The wafer is processed while the first processing gas and the second processing gas having different compositions are supplied.

Claims

1. A plasma processing apparatus for processing a wafer mounted on a sample stage placed in a vacuum processing chamber using a plasma generated in the vacuum processing chamber, the plasma processing apparatus comprising:

a plate disposed in the vacuum processing chamber above and opposed to the wafer, the plate having a through hole through which a first processing gas is introduced;

a generally band shaped gap disposed in the vacuum processing chamber; and

a gas channel which is disposed circumferentially outside of the vacuum processing chamber and communicated with the gap, wherein a second processing gas is supplied inside the gas channel,

at least one hole or slit disposed between the gas channel and the gap for communicating the gas channel with the gap,

wherein the gas channel is disposed inside of a ring-shaped member communicated with the gap through the at least one hole or slit provided in an inner peripheral wall of the ring-shaped member

wherein a first portion of the gap is defined between the inner peripheral wall of the ring-shaped member and a first cylindrical portion of an outer peripheral surface of a ring cover facing and spaced from the inner peripheral wall of the ring-shaped member, and a second portion of the gap is defined between an inner surface of a wall of the vacuum processing chamber and a second portion of the outer peripheral surface of the ring cover facing and spaced from the inner surface of a wall of the vacuum processing chamber

wherein a height of the gap is configured to be larger than a height or diameter of the hole or slit, and the wafer is processed while the first processing gas and the second processing gas having different compositions are supplied into the vacuum processing chamber.

2. The plasma processing apparatus according to claim 1, wherein the ring cover and the vacuum processing chamber are arranged vertically and adjacently.

3. The plasma processing apparatus according to claim 1, wherein the ring cover and the inner surface of a wall of the vacuum processing chamber face the plasma.

4. The plasma processing apparatus according to claim 1, wherein the gap is formed with a predetermined slope.

5. The plasma processing apparatus according to claim 1, wherein the sample stage includes temperature control means for the wafer, and the outer periphery of the wafer is located outside the wafer mounting surface of the sample stage.

6. The plasma processing apparatus according to claim 1, wherein the gap communicates with the vacuum processing chamber through an opening provided between an end of the second portion of the ring cover and the inner surface of a wall of the vacuum processing chamber.

7. The plasma processing apparatus according to claim 6, wherein the second portion of the outer peripheral surface of the ring cover and the portion of the inner surface of a wall of the vacuum processing chamber facing and spaced from the second portion of the outer peripheral surface of the ring cover are tapered such that the second portion of the gap is directed inwardly towards an outer peripheral edge of the sample stage.