Semiconductor device and method for manufacturing the same

• US 7,888,163 B2
• Filed: 05/28/2009
• Issued: 02/15/2011
• Est. Priority Date: 06/06/2008
• Status: Expired due to Fees

• Current Assignee: Semiconductor Energy Laboratory Co., Ltd.
• Original Assignee: Semiconductor Energy Laboratory Co., Ltd.
• Inventors: Nagata, Takaaki, Chida, Akihiro
• Primary Examiner(s): Kebede; Brook
• Application Number:
  US12/473,299
• Publication Number:
  US 20090302455A1
• Time in Patent Office: 628 Days
• Field of Search: 438/82, 438/99, 438/149, 438455-459, 257/40, 257/E51.013
• US Class Current: 438/82
• CPC Class Codes: H01L 21/561 Batch processing
• CPC Class Codes: H01L 21/568 Temporary substrate used as encapsulation process aid H01L21/4832 and H01L21/566 take precedence
• CPC Class Codes: H01L 2223/6677 for antenna, e.g. antenna included within housing of semiconductor device antennas per se H01Q
• CPC Class Codes: H01L 2224/16 of an individual bump connector
• CPC Class Codes: H01L 23/293 Organic, e.g. plastic
• CPC Class Codes: H01L 23/295 containing a filler H01L23/296 takes precedence
• CPC Class Codes: H01L 23/3114 the device being a chip scale package, e.g. CSP
• CPC Class Codes: H01L 23/49855 for flat-cards, e.g. credit cards cards per se G06K19/00
• CPC Class Codes: H01L 23/5389 the chips being integrally enclosed by the interconnect and support structures
• CPC Class Codes: H01L 23/60 Protection against electrostatic charges or discharges, e.g. Faraday shields
• CPC Class Codes: H01L 25/50 Multistep manufacturing processes of assemblies consisting of devices, each device being of a type provided for in group H01L27/00 or H01L29/00 H01L21/50 takes precedence
• CPC Class Codes: H01L 2924/12044 OLED

Abstract

An object is to increase resistance against an electrostatic breakdown and to increase resistance to an external stress. Another object is to reduce cost by simplifying the manufacturing process. In a step in which an element formation layer is provided between a first organic resin layer provided with a first conductive film on its surface and a second organic resin layer provided with a second conductive film on its surface to electrically connect the first conductive film and the second conductive film with a contact conductor formed in each of the organic resin layers, the contact conductor provided in each of the first organic resin layer and the second organic resin layer is manufactured by making paste penetrate before an organic resin is cured and then curing the organic resin layer.

Claims

1. A method for manufacturing a semiconductor device comprising:

forming a separation layer over a substrate;

forming an element formation layer having a semiconductor integrated circuit and an antenna over the separation layer;

forming an organic resin layer so as to cover the element formation layer;

forming paste with conductivity over a first surface of the organic resin layer before the organic resin layer is cured, the paste being in a region not overlapping with at least the element formation layer;

forming a conductor which reaches a second surface of the organic resin layer opposite to the first surface of the organic resin layer from the first surface by curing the organic resin layer after the paste is made to penetrate into the organic resin layer; and

forming a conductive film over the organic resin layer so as to be electrically connected to the conductor and so as to overlap with the element formation layer.

2. The method for manufacturing a semiconductor device according to claim 1, wherein a structure body in which a fibrous body is impregnated with an organic resin is used instead of the organic resin layer.

3. The method for manufacturing a semiconductor device according to claim 2, wherein an epoxy resin is used as the organic resin, and silver paste is used as the paste.

4. A method for manufacturing a semiconductor device comprising:

forming a separation layer over a substrate;

forming an element formation layer having a semiconductor integrated circuit and an antenna over the separation layer;

forming a first organic resin layer so as to cover the element formation layer;

forming first paste with conductivity over a first surface of the first organic resin layer before the first organic resin layer is cured, the first paste being in a region not overlapping with at least the element formation layer;

forming a first conductor which reaches a second surface of the first organic resin layer opposite to the first surface of the first organic resin layer from the first surface by curing the first organic resin layer after the first paste is made to penetrate into the first organic resin layer;

forming a first conductive film over the first organic resin layer so as to be electrically connected to the first conductor and so as to overlap with the element formation layer;

separating the element formation layer from the substrate to expose the first conductor formed in the first organic resin layer on a separation surface;

forming a second organic resin layer over the separation surface;

forming second paste with conductivity over a first surface of the second organic resin layer before the second organic resin layer is cured, the second paste being in a region overlapping with at least the first conductor exposed on the separation surface;

forming a second conductor which reaches a second surface of the second organic resin layer opposite to the first surface of the second organic resin layer from the first surface and is electrically connected to the first conductor by curing the second organic resin layer after the second paste is made to penetrate into the second organic resin layer; and

forming a second conductive film over the second organic resin layer so as to be electrically connected to the second conductor and so as to overlap with the element formation layer.

5. The method for manufacturing a semiconductor device according to claim 4, wherein a structure body in which a fibrous body is impregnated with an organic resin is used instead of at least one of the first organic resin layer and the second organic resin layer.

6. The method for manufacturing a semiconductor device according to claim 5, wherein an epoxy resin is used as the organic resin, and silver paste is used as the first paste and the second paste.

7. A method for manufacturing a semiconductor device comprising:

forming a separation layer over a substrate;

forming a first protective film over the separation layer;

forming an element formation layer having a semiconductor integrated circuit and an antenna over the first protective film;

forming a second protective film over the element formation layer;

forming a first organic resin layer so as to cover the second protective film;

forming first paste with conductivity over a first surface of the first organic resin layer before the first organic resin layer is cured;

forming a first conductor which reaches a second surface of the first organic resin layer opposite to the first surface of the first organic resin layer from the first surface by curing the first organic resin layer after the first paste is made to penetrate into the first organic resin layer;

separating the element formation layer from the substrate and selectively removing the first protective film and the second protective film at a separation surface to expose the first conductor formed in the first organic resin layer;

forming a second organic resin layer over the separation surface;

forming second paste with conductivity over a first surface of the second organic resin layer before the second organic resin layer is cured; and

forming a second conductor which reaches a second surface of the second organic resin layer opposite to a first surface of the second organic resin layer from the first surface and is electrically connected to the first conductor by curing the second organic resin layer after the second paste is made to penetrate into the second organic resin layer.

8. The method for manufacturing a semiconductor device according to claim 7, wherein the first paste formed over the first surface of the first organic resin layer is provided in a meshed manner, and the second paste formed over the first surface of the second organic resin layer is provided in a meshed manner.

9. The method for manufacturing a semiconductor device according to claim 7, wherein a structure body in which a fibrous body is impregnated with an organic resin is used instead of at least one of the first organic resin layer and the second organic resin layer.

10. The method for manufacturing a semiconductor device according to claim 9, wherein an epoxy resin is used as the organic resin, and silver paste is used as the first paste and the second paste.

11. A semiconductor device comprising:

a first organic resin layer and a second organic resin layer which are provided so as to face each other;

an element formation layer having a semiconductor integrated circuit and an antenna, which is provided between the first organic resin layer and the second organic resin layer;

a first conductive film provided on a first surface of the first organic resin layer;

a second conductive film provided on a first surface of the second organic resin layer;

a first conductor which is electrically connected to the first conductive film and reaches a second surface of the first organic resin layer opposite to the first surface of the first organic resin layer from the first surface; and

a second conductor which is electrically connected to the second conductive film and reaches a second surface of the second organic resin layer opposite to a first surface of the second organic resin layer from the first surface,

wherein the first organic resin layer includes at least a structure body in which a fibrous body is impregnated with an organic resin,

wherein the first conductor is provided in the first organic resin layer through space in the fibrous body, and

wherein the first conductive film and the second conductive film are electrically connected to each other through the first conductor and the second conductor.

12. The semiconductor device according to claim 11, wherein the first conductor and the second conductor are made of silver.

13. A semiconductor device comprising:

a first organic resin layer and a second organic resin layer which are provided so as to face each other;

an element formation layer having a semiconductor integrated circuit and an antenna, which is provided between the first organic resin layer and the second organic resin layer;

a first conductive film provided on a first surface of the first organic resin layer;

a second conductive film provided on a first surface of the second organic resin layer;

a first conductor which is electrically connected to the first conductive film and reaches a second surface of the first organic resin layer opposite to the first surface of the first organic resin layer from the first surface; and

a second conductor which is electrically connected to the second conductive film and reaches a second surface of the second organic resin layer opposite to a first surface of the second organic resin layer from the first surface,

wherein the first organic resin layer includes at least a structure body in which a first fibrous body is impregnated with a first organic resin,

wherein the first conductor is provided in the first organic resin layer through space in the first fibrous body,

wherein the second organic resin layer includes at least a structure body in which a second fibrous body is impregnated with a second organic resin,

wherein the second conductor is provided in the second organic resin layer through space in the second fibrous body, and

wherein the first conductive film and the second conductive film are electrically connected to each other through the first conductor and the second conductor.

14. The semiconductor device according to claim 13, wherein the first conductor and the second conductor are made of silver.