Organic semiconductor device and method of manufacturing the same

• US 7,888,169 B2
• Filed: 12/26/2007
• Issued: 02/15/2011
• Est. Priority Date: 12/26/2007
• Status: Expired due to Fees

• Current Assignee: Tap Development LLC (Intellectual Ventures LLC)
• Original Assignee: OrganicID, Inc. (Weyerhauser)
• Inventors: Mohapatra, Siddharth, Wenz, Robert P.
• Primary Examiner(s): Smith; Zandra
• Assistant Examiner(s): Joy; Jeremy J
• Application Number:
  US11/964,577
• Publication Number:
  US 20090239333A1
• Time in Patent Office: 1,147 Days
• Field of Search: 438/99, 438/149, 257/E51.027, 257/E51.029, 257/E29.117, 257/E29.137, 257E51005-E51006, 2504921-4922
• US Class Current: 438/99
• CPC Class Codes: H10K 10/464 Lateral top-gate IGFETs comprising only a single gate
• CPC Class Codes: H10K 10/466 Lateral bottom-gate IGFETs comprising only a single gate
• CPC Class Codes: H10K 10/82 Electrodes
• CPC Class Codes: H10K 71/135 using ink-jet printing

Abstract

A low-cost and efficient process producing improved organic electronic devices such as transistors that may be used in a variety of applications is described. The applications may include radio frequency identification (RFID) devices, displays and the like. In one embodiment, the improved process is implemented by flash annealing a substrate with an energy having wavelengths ranging from about 250 nm to about 1100 nm or higher. In this flash annealing process energy having wavelengths from about 250 nm to about 350 nm or higher is substantially prevented from irradiating the substrate.

Claims

1. A method of manufacturing an organic transistor, comprising:

providing a substrate;

forming a gate electrode on the substrate;

selectively forming nanoparticle ink on the gate electrode to form posts;

selectively forming a dielectric material on the substrate;

flash annealing the nanoparticle ink with an energy having wavelengths ranging from about 250 nm to about 1100 nm or higher, wherein the flash annealing comprises preventing energy having wavelengths from about 250 nm to about 350 nm from irradiating the nanoparticle ink, and

wherein the flash annealing cures the nanoparticle ink and simultaneously forms vias in the dielectric layer above the posts;

forming source/drain electrodes in electrical communication with the posts; and

forming an organic semiconductor layer on the substrate.

2. The method of claim 1, wherein the preventing the energy having wavelengths from about 250 nm to about 350 nm from irradiating the substrate step comprises providing at least one filter to substantially prevent the wavelengths from about 250 nm to about 350 nm from irradiating the nanoparticle ink.

3. The method of claim 2, wherein the at least one filter comprises three soda lime glass filters.

4. The method of claim 1, wherein the organic semiconductor material comprises a polythiophene derivative polymer.

5. The method of claim 1, wherein the source/drain electrodes are formed from a material selected from the group consisting of gold, silver, platinum, and combinations thereof.

6. The method of claim 1, wherein the gate electrode is formed with electron beam deposition.

7. The method of claim 1, wherein the selectively forming nanoparticle ink step comprises selectively printing Ag nanoparticle ink.

8. The method of claim 1, wherein the organic transistor is used in at least one of a display device and RFID device.