Transistor structures and methods for making the same
First Claim
1. A method for making an enhancement mode, field effect transistor comprising:
- depositing ZnO or SnO2 onto at least a portion of a surface of a gate insulating layer; and
annealing the deposited ZnO or SnO2 for about 1 to about 5 minutes at a temperature of about 300 to about 1000°
C. in an oxidative or inert atmosphere to make a layer comprising ZnO or SnO2.wherein the field effect transistor exhibits an optical transmission through the field effect transistor of at least about 70% in the visible portion of the electromagnetic spectrum.
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Accused Products
Abstract
Enhancement mode, field effect transistors wherein at least a portion of the transistor structure may be substantially transparent. One variant of the transistor includes a channel layer comprising a substantially insulating, substantially transparent, material selected from ZnO or SnO2. A gate insulator layer comprising a substantially transparent material is located adjacent to the channel layer so as to define a channel layer/gate insulator layer interface. A second variant of the transistor includes a channel layer comprising a substantially transparent material selected from substantially insulating ZnO or SnO2, the substantially insulating ZnO or SnO2 being produced by annealing. Devices that include the transistors and methods for making the transistors are also disclosed.
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Citations
26 Claims
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1. A method for making an enhancement mode, field effect transistor comprising:
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depositing ZnO or SnO2 onto at least a portion of a surface of a gate insulating layer; and annealing the deposited ZnO or SnO2 for about 1 to about 5 minutes at a temperature of about 300 to about 1000°
C. in an oxidative or inert atmosphere to make a layer comprising ZnO or SnO2.wherein the field effect transistor exhibits an optical transmission through the field effect transistor of at least about 70% in the visible portion of the electromagnetic spectrum. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13, 14, 15, 16, 19)
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17. A method for making an enhancement mode, field effect transistor comprising:
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depositing ZnO or SnO2 onto at least a portion of a surface of a gate insulating layer; and treating the ZnO or SnO2 such that the treated ZnO or SnO2 has a higher resistivity and a lower oxygen vacancy concentration relative to the untreated ZnO or SnO2. - View Dependent Claims (18, 20)
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21. A method for making an enhancement mode, field effect transistor comprising:
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depositing ZnO onto at least a portion of a surface of a gate insulating layer; and annealing the deposited ZnO for about 1 to about 5 minutes at a temperature of about 300 to about 1000°
C. in an oxidative or inert atmosphere,wherein the field effect transistor exhibits an optical transmission through the field effect transistor of at least about 70% in the visible portion of the electromagnetic spectrum. - View Dependent Claims (22, 23)
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24. A method for making an enhancement mode, field effect transistor comprising:
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depositing ZnO or SnO2 onto at least a portion of a surface of a gate insulating layer; and annealing the ZnO or SnO2 for about 1 to about 5 minutes at a temperature of about 300 to about 1000°
C. in an oxidative atmosphere to make a layer comprising ZnO or SnO2.
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25. A method for making an enhancement mode, field effect transistor comprising:
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depositing ZnO or SnO2 onto at least a portion of a surface of a gate insulating layer; and annealing the deposited ZnO or SnO2 for about 1 to about 5 minutes at a temperature of about 300 to about 1000°
C. in an oxidative or inert atmosphere to make a layer comprising ZnO or SnO2,wherein the method further comprises depositing on the gate insulating layer at least one material for forming a source and a drain prior to depositing the ZnO or SnO2.
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26. A method for making an enhancement mode, field effect transistor comprising:
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depositing ZnO or SnO2 onto at least a portion of a surface of a gate insulating layer; and annealing the deposited ZnO or SnO2 for about 1 to about 5 minutes at a temperature of about 300 to about 1000°
C. in an oxidative or inert atmosphere to make a layer comprising ZnO or SnO2,wherein the ZnO is not doped.
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Specification