Flowable film dielectric gap fill process
First Claim
1. A method of depositing a dielectric material on a substrate, the method comprising:
- (a) introducing an oxidant reactant and a dielectric precursor reactant into a reaction chamber, such that the reactants are present in the chamber in vapor phase at the same time, wherein the oxidant reactant is steam; and
(b) reacting the oxidant reactant with the dielectric precursor reactant to form a flowable film.
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Abstract
Methods of this invention relate to filling gaps on substrates with a solid dielectric material by forming a flowable film in the gap. The flowable film provides consistent, void-free gap fill. The film is then converted to a solid dielectric material. In this manner gaps on the substrate are filled with a solid dielectric material. According to various embodiments, the methods involve reacting a dielectric precursor with an oxidant to form the dielectric material. In certain embodiments, the dielectric precursor condenses and subsequently reacts with the oxidant to form dielectric material. In certain embodiments, vapor phase reactants react to form a condensed flowable film.
449 Citations
30 Claims
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1. A method of depositing a dielectric material on a substrate, the method comprising:
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(a) introducing an oxidant reactant and a dielectric precursor reactant into a reaction chamber, such that the reactants are present in the chamber in vapor phase at the same time, wherein the oxidant reactant is steam; and (b) reacting the oxidant reactant with the dielectric precursor reactant to form a flowable film. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13, 14, 15, 16, 17, 18, 19, 20)
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21. A method of depositing a dielectric material on a substrate, the method comprising:
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(a) introducing an oxidant reactant and a dielectric precursor reactant into a reaction chamber, such that the reactants are present in the chamber in vapor phase at the same time; (b) reacting the oxidant reactant with the dielectric precursor reactant to form a flowable film; and (c) exposing the flowable film to oxygen radicals. - View Dependent Claims (22, 23, 24, 25, 26, 27, 28, 29, 30)
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Specification