Method of forming phase change memory devices in a pulsed DC deposition chamber
First Claim
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1. A method, comprising:
- providing a deposition chamber;
moving a substrate into the deposition chamber;
forming a chalcogenide layer directly or indirectly on the substrate in the deposition chamber; and
depositing a carbon film directly or indirectly on the substrate using a 350 kHz direct current pulser.
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Abstract
A phase change memory including an ovonic threshold switch is formed using a pulsed direct current (DC) deposition chamber using pulsed DC. Pulsed DC is used to deposit a chalcogenide film. Pulsed DC may be also used to deposit a carbon film.
36 Citations
19 Claims
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1. A method, comprising:
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providing a deposition chamber; moving a substrate into the deposition chamber; forming a chalcogenide layer directly or indirectly on the substrate in the deposition chamber; and depositing a carbon film directly or indirectly on the substrate using a 350 kHz direct current pulser. - View Dependent Claims (2, 4, 5, 6, 7, 8, 9)
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3. A method, comprising:
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providing a deposition chamber; moving a substrate into the deposition chamber; forming a chalcogenide layer directly or indirectly on the substrate in the deposition chamber using a pulsed direct current device; operating the pulsed direct current device at a first frequency to form at least a portion of the chalcogenide layer; and operating the pulsed direct current device at a second frequency that is greater than the first frequency to deposit a carbon layer, wherein the second frequency is about 350 kHz.
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10. A method, comprising:
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providing a pulsed direct current deposition chamber; forming at least a portion of a phase change memory element including a chalcogenide film using the pulsed direct current deposition chamber; and depositing a carbon film of the phase change memory element in the pulsed direct current deposition chamber using a 350 kHz direct current pulser. - View Dependent Claims (11, 12, 13)
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14. A method of forming a memory device, comprising:
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providing a cluster tool having a plurality of reaction chambers; forming a portion of a phase change memory device in one of the reaction chambers using a direct current pulser, the portion of the phase change memory device comprising chalcogenide; depositing a carbon layer of the phase change memory device in one of the reaction chambers using a 350 kHz direct current conductive pulser. - View Dependent Claims (15, 16, 17, 18, 19)
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Specification