Device for detecting stress migration properties
First Claim
1. A device for detecting stress migration properties of a semiconductor module finally mounted in a product-relevant housing, the device comprising:
- a stress migration test structure formed in the semiconductor module to detect the stress migration properties; and
an integrated heating device formed in the semiconductor module, the integrated heating device being formed within or in direct proximity to the stress migration test structure in the semiconductor module to locally heat the stress migration test structure;
wherein the stress migration test structure comprises a first interconnect region in a first interconnect layer, a second interconnect region in a second interconnect layer, and a connecting region electrically connecting the interconnect regions through a first insulating layer formed between the interconnect layers;
wherein the integrated heating device comprises a heating interconnect region through which a heating current flows, the heating interconnect region being outside the first or second interconnect region or connecting region, the heating interconnect region being formed in the first interconnect layer, the second interconnect layer or an interconnect layer adjoining the first or second interconnect region.
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Abstract
A device and method are provided for detecting stress migration properties of a semiconductor module mounted in a housing. A stress migration test (SMT) structure is formed in the semiconductor module. An integrated heating (IH) device is formed within or in direct proximity to the SMT structure. The SMT structure includes a first interconnect region in a first interconnect layer, a second interconnect region in a second interconnect layer, and a connecting region electrically connecting the interconnect regions through a first insulating layer. The IH device includes a heating interconnect region through which a heating current flows. The heating interconnect region is within or outside the first or second interconnect region or connecting region. When the heating current is applied, a measurement voltage is applied to the SMT structure, and a current through the SMT structure is measured to detect stress migration properties of the semiconductor module.
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Citations
18 Claims
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1. A device for detecting stress migration properties of a semiconductor module finally mounted in a product-relevant housing, the device comprising:
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a stress migration test structure formed in the semiconductor module to detect the stress migration properties; and an integrated heating device formed in the semiconductor module, the integrated heating device being formed within or in direct proximity to the stress migration test structure in the semiconductor module to locally heat the stress migration test structure; wherein the stress migration test structure comprises a first interconnect region in a first interconnect layer, a second interconnect region in a second interconnect layer, and a connecting region electrically connecting the interconnect regions through a first insulating layer formed between the interconnect layers; wherein the integrated heating device comprises a heating interconnect region through which a heating current flows, the heating interconnect region being outside the first or second interconnect region or connecting region, the heating interconnect region being formed in the first interconnect layer, the second interconnect layer or an interconnect layer adjoining the first or second interconnect region. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9)
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10. A semiconductor structure comprising:
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a stress migration test structure formed in the semiconductor structure, the stress migration test structure comprising a first interconnect region in a first interconnect layer, a second interconnect region in a second interconnect layer on a different plane than the first interconnect layer, and a connecting region electrically connecting the interconnect regions through a first insulating layer formed between the interconnect layers; and an integrated heating device formed in the semiconductor structure, the integrated heating device including a heating interconnect region through which a heating current flows, the integrated heating device being formed within or in direct proximity to the stress migration test structure, the heating interconnect region being formed in the first interconnect layer, the second interconnect layer or an interconnect layer adjoining the first or second interconnect region. - View Dependent Claims (11, 12, 13, 14, 15, 16, 17, 18)
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Specification