Light emitting device and method of producing light emitting device with a semiconductor includes one of chalcopyrite and oxychacogenide

• US 7,888,684 B2
• Filed: 03/15/2007
• Issued: 02/15/2011
• Est. Priority Date: 03/17/2006
• Status: Expired due to Fees

• Current Assignee: Canon Kabushiki Kaisha (Canon Inc.)
• Original Assignee: Canon Kabushiki Kaisha (Canon Inc.)
• Inventors: Oike, Tomoyuki, Den, Toru, Iwasaki, Tatsuya
• Primary Examiner(s): Smith; Matthew S
• Application Number:
  US12/162,924
• Publication Number:
  US 20090134427A1
• Time in Patent Office: 1,433 Days
• Field of Search: 257/76, 257/103, 257/E33.013, 257/E21.158
• US Class Current: 257/76
• CPC Class Codes: H01L 33/0087 with a substrate not being a II-VI compound
• CPC Class Codes: H01L 33/26 Materials of the light emitting region
• CPC Class Codes: H01L 33/285 characterised by the doping materials

Abstract

There has not been a DC drive type light emitting device capable of providing high brightness. The present invention provides a light emitting device, including: a pair of electrodes; a light emitter placed between the electrodes; and a semiconductor laminated to be adjacent to the light emitter, in which the semiconductor contains one of a chalcopyrite and an oxychalcogenide.

Claims

1. A light emitting device, comprising:

a pair of electrodes;

a light emitter placed between the electrodes; and

a semiconductor laminated to be adjacent to the light emitter,

wherein the semiconductor includes one of a chalcopyrite and an oxychalcogenide,

wherein a constituent material of the light emitter is represented by ZnS;

A (acceptor), D (donor), and at least one material is selected from Au, Ag, Cu, N, O, S, Se, and Te for the A (acceptor), and at least one material is selected from Al, Ga, In, F, Cl, Br, I, O, S, Se, and Te for the D (donor),

wherein the chalcopyrite is represented by a I-III-VI₂ type, and a group I material thereof is selected from Cu and Ag, a group III material thereof is selected from Al, Ga, and In, and a group VI material thereof is selected from S, Se, and Te, and

wherein the at least one material corresponding to the A (acceptor) and the at least one material D (donor) are diffused from the chalcopyrite or the oxychalcogenide due to a heat treatment.

2. A light emitting device according to claim 1, wherein at least one of the A (acceptor) and the D (donor) includes:

same materials as the group I materials and the group III materials, which are included in the chalcopyrite, when the semiconductor includes the chalcopyrite, and

a same material as a material included in the oxychalcogenide, when the semiconductor includes the oxychalcogenide.

3. A light emitting device according to claim 1, wherein the A (acceptor) and the D (donor) have a concentration of 10⁻

3 mol/mol or less.

4. A light emitting device according to claim 1, wherein:

the chalcopyrite is represented by a I-III-S₂ type; and

a group I material of the chalcopyrite is selected at least from Cu and Ag, and a group III material of the chalcopyrite is selected at least from Al and Ga.

5. A light emitting device according to claim 1, wherein:

the at least one material for the A (acceptor) is selected at least from Ag and Cu, and at least one material for the D (donor) is selected from Al, Ga, and Cl.

6. A light emitting device according to claim 1, wherein lattice matching between the chalcopyrite or the oxychalcogenide and a material included in the light emitter is 10% or less.

7. A light emitting device according to claim 1, wherein the semiconductor is provided on an anode side of the light emitter, and a positive electrode of a DC power supply is connected to an anode and a negative electrode of the DC power supply is connected to a cathode so that light is emitted.

8. A light emitting device according to claim 1, wherein the oxychalcogenide includes an amorphous material.

9. A light emitting device according to claim 1, wherein the light emitter includes a compound having a crystalline structure of a sphalerite structure.