Capacitive micromachined ultrasonic transducer and manufacturing method
First Claim
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1. An integrated circuit/transducer device, comprising:
- a substrate;
a complementary-metal-oxide-semiconductor (CMOS) circuit fabricated on the substrate; and
a capacitive micromachined ultrasonic transducer (cMUT) element fabricated on the substrate and connected to the CMOS circuit, wherein the CMOS circuit and the cMUT element are fabricated during the same foundry process, and wherein the cMUT element includes;
a lower electrode adapted to maintain a first electrical potential,an upper electrode adapted to maintain a second electrical potential,a membrane structure that structurally supports the upper electrode over the lower electrode, wherein an outer region of the membrane structure is thinner than a central region of the membrane, anda cavity between the lower electrode and the upper electrode, wherein the lower electrode and the upper electrode of the cMUT each form a layer of the CMOS circuit.
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Abstract
The integrated circuit/transducer device of the preferred embodiment includes a substrate, a complementary-metal-oxide-semiconductor (CMOS) circuit that is fabricated on the substrate, and a capacitive micromachined ultrasonic transducer (cMUT) element that is also fabricated on the substrate. The CMOS circuit and cMUT element are fabricated during the same foundry process and are connected. The cMUT includes a lower electrode, an upper electrode, a membrane structure that support the upper electrode, and a cavity between the upper electrode and lower electrode.
103 Citations
11 Claims
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1. An integrated circuit/transducer device, comprising:
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a substrate; a complementary-metal-oxide-semiconductor (CMOS) circuit fabricated on the substrate; and a capacitive micromachined ultrasonic transducer (cMUT) element fabricated on the substrate and connected to the CMOS circuit, wherein the CMOS circuit and the cMUT element are fabricated during the same foundry process, and wherein the cMUT element includes; a lower electrode adapted to maintain a first electrical potential, an upper electrode adapted to maintain a second electrical potential, a membrane structure that structurally supports the upper electrode over the lower electrode, wherein an outer region of the membrane structure is thinner than a central region of the membrane, and a cavity between the lower electrode and the upper electrode, wherein the lower electrode and the upper electrode of the cMUT each form a layer of the CMOS circuit.
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2. An integrated circuit/transducer device, comprising:
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a substrate; a complementary-metal-oxide-semiconductor (CMOS) circuit fabricated on the substrate; and a capacitive micromachined ultrasonic transducer (cMUT) element fabricated on the substrate and connected to the CMOS circuit, wherein the CMOS circuit and the cMUT element are fabricated during the same foundry process, and wherein the cMUT element includes; a lower electrode adapted to maintain a first electrical potential, an upper electrode adapted to maintain a second electrical potential, a membrane structure that structurally supports the upper electrode over the lower electrode, wherein an outer region of the membrane structure is thinner than a central region of the membrane, a cavity between the lower electrode and the upper electrode, and at least one electrical conductor spanning the membrane and connected to the upper electrode. - View Dependent Claims (3, 4, 5, 6, 7, 8, 9, 10, 11)
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Specification