Semiconductor device and method of manufacturing the same
First Claim
1. A semiconductor device comprising:
- a substrate having an insulating surface;
a light sensor element over the insulating surface, the light sensor element comprising a first electrode, a second electrode, and a photoelectric conversion layer;
a wire electrically connected to the first electrode; and
an amplifier circuit including an n-channel TFT, the amplifier circuit over the insulating surface,wherein the n-channel TFT includes a source electrode, a drain electrode, and a gate electrode,wherein the gate electrode of the n-channel TFT is electrically connected to the wire,wherein the wire is covered with the first electrode,wherein the second electrode is provided over the photoelectric conversion layer,wherein end portions of the second electrode extend beyond end portions of the photoelectric conversion layer, andwherein the first electrode is a film containing Ti.
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Accused Products
Abstract
Considering further promotion of high output and miniaturization of a sensor element, it is an object of the present invention to form a plurality of elements in a limited area so that an area occupied by the element is reduced for integration. It is another object to provide a process which improves the yield of a sensor element. According to the present invention, a sensor element using an amorphous silicon film and an output amplifier circuit constituted by a thin film transistor are formed over a substrate having an insulating surface. In addition, a metal layer for protecting an exposed wire when a photoelectric conversion layer of the sensor element is patterned is provided between the photoelectric conversion layer and the wire connected to the thin film transistor.
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Citations
34 Claims
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1. A semiconductor device comprising:
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a substrate having an insulating surface; a light sensor element over the insulating surface, the light sensor element comprising a first electrode, a second electrode, and a photoelectric conversion layer; a wire electrically connected to the first electrode; and an amplifier circuit including an n-channel TFT, the amplifier circuit over the insulating surface, wherein the n-channel TFT includes a source electrode, a drain electrode, and a gate electrode, wherein the gate electrode of the n-channel TFT is electrically connected to the wire, wherein the wire is covered with the first electrode, wherein the second electrode is provided over the photoelectric conversion layer, wherein end portions of the second electrode extend beyond end portions of the photoelectric conversion layer, and wherein the first electrode is a film containing Ti. - View Dependent Claims (5, 7, 11, 15, 19, 23, 27, 31)
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2. A semiconductor device comprising:
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a substrate having an insulating surface; a light sensor element over the insulating surface, the light sensor element comprising a first electrode, a second electrode, and a photoelectric conversion layer; a wire electrically connected to the first electrode; and an amplifier circuit including a TFT, the amplifier circuit over the insulating surface, wherein the TFT includes a source electrode, a drain electrode, and a gate electrode, wherein the gate electrode of the TFT is electrically connected to the wire, wherein the wire is covered with the first electrode, wherein the second electrode is provided over the photoelectric conversion layer, wherein end portions of a top surface of the second electrode extend beyond end portions of the photoelectric conversion layer, and wherein the first electrode is a film containing Ti. - View Dependent Claims (6, 8, 12, 16, 20, 24, 28, 32)
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3. A semiconductor device comprising:
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a substrate having an insulating surface; a light sensor element over the insulating surface; and an amplifier circuit over the insulating surface, wherein the amplifier circuit comprises an n-channel TFT having a semiconductor film having a crystalline structure, and wherein the light sensor element includes a wire connected to the n-channel TFT, a photoelectric conversion layer over the wire, and an electrode on the photoelectric conversion layer, and an end portion of the electrode projects beyond an end portion of the photoelectric conversion layer. - View Dependent Claims (9, 13, 17, 21, 25, 29, 33)
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4. A semiconductor device comprising:
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a small piece of a substrate having an insulating surface; a light sensor element over the insulating surface; and an amplifier circuit over the insulating surface, an interlayer insulating film over the thin film transistor; a wire connected to the thin film transistor over the interlayer insulating film; a photoelectric conversion layer formed over a part of the wire; and an electrode over the photoelectric conversion layer, wherein an end portion of the electrode projects than an end portion of the photoelectric conversion layer. - View Dependent Claims (10, 14, 18, 22, 26, 30, 34)
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Specification