Electrostatic discharge circuit and method of dissipating an electrostatic current

• US 7,888,739 B2
• Filed: 08/11/2005
• Issued: 02/15/2011
• Est. Priority Date: 02/07/2005
• Status: Expired due to Fees

• Current Assignee: Samsung Electronics Co. Ltd.
• Original Assignee: Samsung Electronics Co. Ltd.
• Inventors: Kim, Han-gu, Jang, Sung-pil, Jeon, Chan-hee
• Primary Examiner(s): Gurley; Lynne A
• Assistant Examiner(s): Li; Meiya
• Application Number:
  US11/201,365
• Publication Number:
  US 20060175663A1
• Time in Patent Office: 2,014 Days
• Field of Search: 257/355, 257361-363, 257/357, 257/173, 257/328, 257/547, 361/91, 361/56, 361/58, 360/323
• US Class Current: 257/355
• CPC Class Codes: H01L 27/0262 including a PNP transistor and a NPN transistor, wherein each of said transistors has its base coupled to the collector of the other transistor, e.g. silicon controlled rectifier [SCR] devices

Abstract

An electrostatic discharge circuit between a first pad and a second pad including an electrostatic discharge circuit element, including a bipolar transistor path and a resistor path, the electrostatic discharge circuit element alternately discharging an electrostatic current through the bipolar transistor path and the resistor path.

Claims

1. An electrostatic discharge circuit comprising:

a first well of a first conductivity type, connected to a first pad;

a second well of the first conductivity type, connected to a second pad;

a third well of a second conductivity type, connected to the first pad; and

a switching pathway of the first conductivity type in the third well, the switching pathway connecting the first well and the second well,

wherein voltages applied to the first pad and the second pad are different from each other, and

the discharge circuit is configured to alternate a discharge of a current of an electrostatic discharge (ESD) event between a plurality of paths a plurality of times, the plurality of paths including the switching pathway.

2. The electrostatic discharge circuit of claim 1, wherein the first conductivity type is positive and the second conductivity type is negative.

3. The electrostatic discharge circuit of claim 1, wherein the first pad is connected to a drive voltage and the second pad is connected to a ground voltage under a normal operation of the electrostatic discharge circuit, and the first pad is connected to an electrostatic current under an electrostatic discharge (ESD) event of the electrostatic discharge circuit.

4. The electrostatic discharge circuit of claim 1, wherein the switching pathway includes a depletion region, and

the switching pathway is configured so that a width of the depletion region is narrower than a width of the switching pathway, and the switching pathway includes a resistor path to discharge an electrostatic current, during at least part of the ESD event of the-electrostatic discharge circuit.

5. The electrostatic discharge circuit of claim 4, wherein the first well, the second well, and the third well are part of a bipolar transistor path, the plurality of paths including the bipolar transistor path.

6. The electrostatic discharge circuit of claim 1, wherein the first well includes a third diffusion layer of the first conductivity type, the third diffusion layer connected to the first pad.

7. The electrostatic discharge circuit of claim 6, wherein the second well includes a second diffusion layer of the second conductivity type and a fourth diffusion layer of the first conductivity type, the second diffusion layer and the fourth diffusion layer connected to the second pad.

8. The electrostatic discharge circuit of claim 7, wherein the third well includes a first diffusion layer of the second conductivity type, the first diffusion layer connected to the first pad.

9. The electrostatic discharge circuit of claim 1, wherein at least one of the first well and the second well are formed in the third well.

10. The electrostatic discharge circuit of claim 1, wherein the switching pathway includes a depletion region, and

the switching pathway is configured to be at least substantially depleted under a normal operation of the electrostatic discharge circuit.

11. The electrostatic discharge circuit of claim 1, wherein the switching pathway is a plurality of switching pathways.

12. The electrostatic discharge circuit of claim 11, wherein the third well includes a first diffusion layer of the second conductivity type between the plurality of switching pathways.

13. An electrostatic discharge circuit between a first pad and a second pad, comprising:

an electrostatic discharge circuit element, including a bipolar transistor path and a switching pathway, the switching pathway including a depletion region, the bipolar transistor path and the switching pathway between the first pad and the second pad,

wherein the switching pathway is configured to be at least substantially depleted under a normal operation,

the switching pathway is configured so that a width of the depletion region is narrower than a width of the switching pathway, and the switching pathway includes a resistor path, during at least part of an ESD event, and

the electrostatic discharge circuit element is configured to alternate a discharge of an electrostatic current between the bipolar transistor path and the resistor path a plurality of times during the ESD event.

14. The electrostatic discharge circuit of claim 13, wherein the switching pathway is located between adjacent contact holes.

15. The electrostatic discharge circuit of claim 13, wherein the bipolar transistor path is part of at least one silicon controlled rectifier.

16. The electrostatic discharge circuit of claim 15, wherein the silicon controlled rectifier includes a pnp bipolar transistor and an npn bipolar transistor.

17. The electrostatic discharge circuit of claim 16, wherein the silicon controlled rectifier further includes a first resistor corresponding to the npn bipolar transistor and a second resistor corresponding to the pnp bipolar transistor.

18. The electrostatic discharge circuit of claim 17, wherein the pnp bipolar transistor and the npn bipolar transistor are configured to operate in a positive-feedback condition that pushes the silicon controlled rectifier into a regeneration mode in which a low impedance discharge channel shunts the electrostatic current.

19. An electrostatic discharge circuit comprising:

a first pad and a second pad; and

an electrostatic discharge circuit element connected between the first pad and the second pad, the electrostatic discharge circuit element including a device configured to alternate a discharge of an electrostatic current between a bipolar transistor path and a resistor path a plurality of times during an ESD event,

wherein the device is configured to include a switching pathway including a depletion region between the first pad and the second pad,

the switching pathway is configured to be at least substantially depleted under a normal operation, and

the switching pathway is configured so that a width of the depletion region is narrower than a width of the switching pathway, and the switching pathway includes the resistor path, during at least part of the ESD event.

20. An electrostatic discharge circuit comprising:

a first pad and a second pad; and

an electrostatic discharge circuit element connected between the first pad and the second pad, the electrostatic discharge circuit element including a device configured to control a voltage across the electrostatic discharge circuit element between a trigger voltage and a hold voltage to alternate discharge an electrostatic current a plurality of times under an ESD event,

wherein the device is configured to include a switching pathway including a depletion region between the first pad and the second pad,

the switching pathway is configured to be at least substantially depleted under a normal operation, and

the switching pathway is configured so that a width of the depletion region is narrower than a width of the switching pathway, and the switching pathway includes a resistor path, during at least part of the ESD event.