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Scattering bar OPC application method for sub-half wavelength lithography patterning

  • US 7,892,707 B2
  • Filed: 01/08/2009
  • Issued: 02/22/2011
  • Est. Priority Date: 06/30/2003
  • Status: Active Grant
First Claim
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1. A method of forming a mask comprising features to be imaged and optical proximity correction features, said method comprising the steps of:

  • forming a first assist feature;

    forming a second assist feature substantially orthogonal or substantially parallel to the first assist feature; and

    forming a connecting assist feature which connects said first assist feature to said second assist feature.

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