Scattering bar OPC application method for sub-half wavelength lithography patterning
First Claim
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1. A method of forming a mask comprising features to be imaged and optical proximity correction features, said method comprising the steps of:
- forming a first assist feature;
forming a second assist feature substantially orthogonal or substantially parallel to the first assist feature; and
forming a connecting assist feature which connects said first assist feature to said second assist feature.
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Abstract
A method of forming a mask having optical proximity correction features, which includes the steps of obtaining a target pattern of features to be imaged, expanding—the width of the features to be imaged, modifying the mask to include assist features which are placed adjacent the edges of the features to be imaged, where the assist features have a length corresponding to the expanded width of the features to be imaged, and returning the features to be imaged from the expanded width to a width corresponding to the target pattern.
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Citations
26 Claims
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1. A method of forming a mask comprising features to be imaged and optical proximity correction features, said method comprising the steps of:
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forming a first assist feature; forming a second assist feature substantially orthogonal or substantially parallel to the first assist feature; and forming a connecting assist feature which connects said first assist feature to said second assist feature. - View Dependent Claims (2, 3, 4, 5, 19, 20, 21, 22)
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6. A method of forming a mask comprising features to be imaged and optical proximity correction features;
- said method comprising the steps of
forming a plurality of first assist features, each of which extends in a first direction; forming a plurality of second assist features, each of which extends in a second direction, said first direction and said second direction being substantially orthogonal to one another; and forming a plurality of connecting assist features, each of which connects one of said first assist features to one of said plurality of second assist features, each of said connecting assist features disposed at an angle relative to both said first direction and said second direction. - View Dependent Claims (7, 8, 9)
- said method comprising the steps of
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10. A program product, comprising executable code transportable by at least one machine readable medium, wherein execution of the code by at least one programmable computer causes the at least one programmable computer to perform a sequence of steps for forming a mask for optically transferring a pattern formed in said mask onto a substrate, said steps comprising:
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forming a first assist feature; forming a second assist feature substantially orthogonal or parallel to the first assist feature; and forming a connecting assist feature which connects said first assist feature to said second assist feature. - View Dependent Claims (11, 12, 13, 14, 23, 24, 25, 26)
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15. A program product, comprising executable code transportable by at least one machine readable medium, wherein execution of the code by at least one programmable computer causes the at least one programmable computer to perform a sequence of steps for forming a mask for optically transferring a pattern formed in said mask onto a substrate, said steps comprising:
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forming a plurality of first assist features, each of which extends in a first direction; forming a plurality of second assist features, each of which extends in a second direction, said first direction and said second direction being substantially orthogonal to one another; and forming a plurality of connecting assist features, each of which connects one of said first assist features to one of said plurality of second assist features, each of said connecting assist features disposed at an angle relative to both said first direction and said second direction, wherein one or more of said plurality of first assist features, one or more of said plurality of second assist features, and one or more of said chamfer assist features are arranged so as to substantially surround a feature to be imaged.
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16. A method of forming a mask comprising features to be imaged and optical proximity correction features;
- said method comprising the steps of;
forming a first assist feature; forming a second assist feature substantially parallel to the first assist feature; forming a chamfer assist feature which connects said first assist feature to said second assist feature, said chamfer assist feature disposed at an angle relative to both said first assist feature and said second assist feature. - View Dependent Claims (17, 18)
- said method comprising the steps of;
Specification
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Current AssigneeASML Netherlands BV (ASML Holding NV)
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Original AssigneeASML Masktools B.V. (ASML Holding NV)
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InventorsLaidig, Thomas, Wampler, Kurt E., Chen, Jang Fung, Van Den Broeke, Douglas
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Primary Examiner(s)Young; Christopher G
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Application NumberUS12/350,919Publication NumberTime in Patent Office775 DaysField of Search430/5, 430/30US Class Current430/5CPC Class CodesG03F 1/36 Masks having proximity corr...
