Fabricating a device with a diamond layer
First Claim
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1. A method, comprising:
- forming a silicon dioxide layer on a surface of a first diamond layer disposed on a first surface of a gallium nitride (GaN)-type layer;
etching the silicon dioxide layer to form a pattern;
etching portions of the diamond exposed by the pattern; and
disposing a second diamond layer on a second surface of the GaN-type layer opposite the first surface of the GaN-type layer.
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Abstract
In one aspect, a method includes forming a silicon dioxide layer on a surface of a diamond layer disposed on a gallium nitride (GaN)-type layer. The method also includes etching the silicon dioxide layer to form a pattern. The method further includes etching portions of the diamond exposed by the pattern.
23 Citations
30 Claims
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1. A method, comprising:
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forming a silicon dioxide layer on a surface of a first diamond layer disposed on a first surface of a gallium nitride (GaN)-type layer; etching the silicon dioxide layer to form a pattern; etching portions of the diamond exposed by the pattern; and disposing a second diamond layer on a second surface of the GaN-type layer opposite the first surface of the GaN-type layer. - View Dependent Claims (2, 3, 4)
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5. A method, comprising:
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forming a silicon dioxide layer on a diamond layer disposed on a gallium nitride (GaN)-type layer; etching portions of the silicon dioxide based on a first isolation mask to expose portions of the diamond layer; etching the portions of the diamond layer exposed by the silicon dioxide after the first etch; etching portions of the silicon dioxide layer to expose a first portion and a second portion of the diamond layer; etching the first portion and the second portion of the diamond layer to expose a first portion and a second portion of the GaN-type layer; and etching portions of the GaN-type layer based on a second isolation mask. - View Dependent Claims (6, 7, 8, 9, 10, 11, 12, 13, 14, 15, 16, 17, 18, 19, 20)
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21. A method, comprising:
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forming a first silicon dioxide layer on a diamond layer disposed on a gallium nitride (GaN)-type layer; etching portions of the first silicon dioxide layer based on a first ohmic mask to expose portions of the diamond layer; etching the portions of the diamond layer exposed by the first silicon dioxide layer to expose a first portion of the GaN-type layer; forming a second silicon dioxide layer on the diamond layer and the exposed first portion of the GaN-type layer; etching a first portion of the second silicon dioxide layer based on a first isolation mask to expose portions of the diamond layer; etching the first portion of the diamond layer exposed by the second silicon dioxide; etching a second portion of the second silicon dioxide layer; and etching the second portion of the diamond layer exposed by the second silicon dioxide based to expose a second portion of the GaN-type layer. - View Dependent Claims (22, 23, 24, 25)
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26. A method, comprising:
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forming a silicon dioxide layer on a diamond layer disposed on a gallium nitride (GaN)-type layer; etching portions of the silicon dioxide layer based on a multipurpose mask to expose portions of the diamond layer, the multipurpose mask being a preprocessing mask for subsequent ohmic, isolation and gate mask processing; etching the portions of the diamond layer exposed by the silicon dioxide to expose a first portion and a second portion of the GaN-type layer; using the exposed first portion of the GaN-type layer to form an ohmic contact; and using the exposed second portion of the GaN-type layer to form a gate. - View Dependent Claims (27, 28, 29, 30)
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Specification