Metal gate electrodes for replacement gate integration scheme
First Claim
1. A method for fabricating a semiconductor device, comprising:
- providing a substrate having a dielectric layer disposed thereon;
forming a trench in said dielectric layer;
providing a gate dielectric layer at the bottom of said trench and above said substrate;
forming a first work-function-setting film of a gate electrode above said gate dielectric layer at the bottom of said trench, wherein said first work-function-setting film is further formed along the sidewalls of said trench, and wherein said first work-function-setting film has a thickness at the bottom of said trench approximately equal to its thickness along the sidewalls of said trench; and
forming a second work-function-setting film of said gate electrode above said first work-function-setting film at the bottom of said trench, wherein said second work-function-setting film is further formed adjacent to said first work-function-setting film along the sidewalls of said trench, and wherein said second work-function-setting film has a thickness at the bottom of said trench greater than its thickness adjacent to said first work-function-setting film along the sidewalls of said trench.
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Accused Products
Abstract
Metal gate electrodes for a replacement gate integration scheme are described. A semiconductor device includes a substrate having a dielectric layer disposed thereon. A trench is disposed in the dielectric layer. A gate dielectric layer is disposed at the bottom of the trench and above the substrate. A gate electrode has a work-function-setting layer disposed along the sidewalls of the trench and above the gate dielectric layer at the bottom of the trench. The work-function-setting layer has a thickness at the bottom of the trench greater than the thickness along the sidewalls of the trench. A pair of source and drain regions is disposed in the substrate, on either side of the gate electrode.
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Citations
7 Claims
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1. A method for fabricating a semiconductor device, comprising:
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providing a substrate having a dielectric layer disposed thereon; forming a trench in said dielectric layer; providing a gate dielectric layer at the bottom of said trench and above said substrate; forming a first work-function-setting film of a gate electrode above said gate dielectric layer at the bottom of said trench, wherein said first work-function-setting film is further formed along the sidewalls of said trench, and wherein said first work-function-setting film has a thickness at the bottom of said trench approximately equal to its thickness along the sidewalls of said trench; and forming a second work-function-setting film of said gate electrode above said first work-function-setting film at the bottom of said trench, wherein said second work-function-setting film is further formed adjacent to said first work-function-setting film along the sidewalls of said trench, and wherein said second work-function-setting film has a thickness at the bottom of said trench greater than its thickness adjacent to said first work-function-setting film along the sidewalls of said trench. - View Dependent Claims (2, 3, 4, 5, 6, 7)
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Specification