Method for porogen removal and mechanical strength enhancement of low-k carbon doped silicon oxide using low thermal budget microwave curing
First Claim
1. A method of preparing a porous low-k dielectric layer on a substrate, the method comprising:
- (a) providing a precursor film on the substrate, the precursor film comprising a dielectric material and a porogen;
(b) exposing the precursor film to microwave radiation to remove the porogen to thereby create voids within the dielectric material and form the porous low-k dielectric layer; and
(c) exposing the dielectric material to microwave radiation in a manner that increases the mechanical strength of the porous low-k dielectric layer, wherein at least part of (b) and (c) occur simultaneously.
1 Assignment
0 Petitions
Accused Products
Abstract
Improved methods for preparing a low-k dielectric material on a substrate using microwave radiation are provided. The use of microwave radiation allows the preparation of low-k films to be accomplished at low temperatures. According to various embodiments, microwave radiation is used to remove porogen from a precursor film and/or to increase the strength of the resulting porous dielectric layer. In a preferred embodiment, methods involve (a) forming a precursor film that contains a porogen and a structure former on a substrate, (b) exposing the precursor film to microwave radiation to remove the porogen from the precursor film to thereby create voids within the dielectric material and form the porous low-k dielectric layer and (c) exposing the dielectric material to microwave radiation in a manner that increases the mechanical strength of the porous low-k dielectric layer.
-
Citations
19 Claims
-
1. A method of preparing a porous low-k dielectric layer on a substrate, the method comprising:
-
(a) providing a precursor film on the substrate, the precursor film comprising a dielectric material and a porogen; (b) exposing the precursor film to microwave radiation to remove the porogen to thereby create voids within the dielectric material and form the porous low-k dielectric layer; and (c) exposing the dielectric material to microwave radiation in a manner that increases the mechanical strength of the porous low-k dielectric layer, wherein at least part of (b) and (c) occur simultaneously. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13, 14, 15, 16, 17, 18, 19)
-
Specification