Light emitting device having nano structures for light extraction

• US 7,893,448 B2
• Filed: 05/22/2006
• Issued: 02/22/2011
• Est. Priority Date: 05/24/2005
• Status: Active Grant

• Current Assignee: Suzhou Lekin Semiconductor Company Limited
• Original Assignee: LG Electronics, Inc. (LG Corporation), LG Innotek Company Limited (LG Corporation)
• Inventors: Kim, Jong wook
• Primary Examiner(s): Andújar; Leonardo
• Assistant Examiner(s): Roland; Christopher M
• Application Number:
  US11/437,809
• Publication Number:
  US 20060270074A1
• Time in Patent Office: 1,737 Days
• Field of Search: 257/95, 257/E33.046
• US Class Current: 257/95
• CPC Class Codes: B82Y 20/00 Nanooptics, e.g. quantum optics or photonic crystals
• CPC Class Codes: G02B 6/0036 2-D arrangement of prisms, protrusions, indentations or roughened surfaces
• CPC Class Codes: G02B 6/0043 provided on the surface of the light guide
• CPC Class Codes: H01L 33/0093 Wafer bonding; Removal of the growth substrate
• CPC Class Codes: H01L 33/22 Roughened surfaces, e.g. at the interface between epitaxial layers

Abstract

The present invention relates to a light emitting device having nano structures for light extraction and a method for manufacturing the same, nano structures comprising nano rods, nano agglomerations, nano recesses, nano patterns with nano line widths, nano through-holes or a combination thereof, formed on a light emitting surface of a light emitting device, thereby enhancing the light extraction efficiency of the device.

Claims

1. A light emitting device having nano structures for light extraction, comprising:

a light emitting structure in which a first semiconductor layer with a first polarity, an active layer, and a second semiconductor layer with a second polarity opposite to the first polarity are laminated;

a plurality of nano-sized structures on the second semiconductor layer;

a first conductor on the first semiconductor layer; and

a second conductor on the second semiconductor layer, wherein the plurality of nano-sized structures comprise nano-sized rods formed of the same or substantially the same material as that of the second semiconductor layer and agglomerations formed on the nano-sized rods, wherein the agglomerations are made of metal that transmit light therethrough from the light emitting structure and are used for light extraction.

2. The light emitting device as claimed in claim 1, wherein the first polarity is n-type or p-type.

3. The light emitting device as claimed in claim 1, wherein each of the nano sized structures has a height (H) of 2˜

50,000 nm and a width of 2˜

5,000 nm.

4. The light emitting device as claimed in claim 1, wherein the second conductor is further disposed thereon with a support layer.

5. The light emitting device as claimed in claim 1, wherein the first and second semiconductor layers comprise a compound semiconductor.

6. A light emitting device having nano structures for light extraction, comprising:

a light emitting structure including a first semiconductor layer with a first polarity, a second semiconductor layer with a second polarity, an active layer emitting light and a main light emitting surface emitting the light from the active layer to the outside; and

a plurality of nano-sized structures on the main light emitting surface, the plurality of nano-sized structures comprising nano-sized rods formed of the same or substantially the same material as that of the second semiconductor layer and agglomerations formed on the nano-sized rods, wherein the agglomerations are made of metal that transmit light therethrough from the light emitting structure and are used for light extraction.