Light emitting device having light extraction structure and method for manufacturing the same
First Claim
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1. A light emitting device comprising:
- a reflective electrode;
a semiconductor layer over the reflective electrode, the semiconductor layer comprising a light emitting layer; and
a light extraction structure arranged on the semiconductor layer,wherein a distance between the reflective electrode and a center of the light emitting layer falls within the ranges represented by an odd multiple of λ
/(4n)±
α
, where “
λ
”
represents a wavelength of light emitted from the light emitting layer, “
n”
represents a refractive index of the semiconductor layer, and “
α
”
represents 0.14λ
/n.
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Abstract
A nitride-based light emitting device capable of achieving an enhancement in emission efficiency and an enhancement in reliability is disclosed. The light emitting device includes a semiconductor layer, and a light extracting layer arranged on the semiconductor layer and made of a material having a refractive index equal to or higher than a reflective index of the semiconductor layer.
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Citations
16 Claims
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1. A light emitting device comprising:
-
a reflective electrode; a semiconductor layer over the reflective electrode, the semiconductor layer comprising a light emitting layer; and a light extraction structure arranged on the semiconductor layer, wherein a distance between the reflective electrode and a center of the light emitting layer falls within the ranges represented by an odd multiple of λ
/(4n)±
α
, where “
λ
”
represents a wavelength of light emitted from the light emitting layer, “
n”
represents a refractive index of the semiconductor layer, and “
α
”
represents 0.14λ
/n. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13, 14, 15, 16)
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Specification