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Light emitting device having light extraction structure and method for manufacturing the same

  • US 7,893,451 B2
  • Filed: 12/14/2009
  • Issued: 02/22/2011
  • Est. Priority Date: 05/08/2006
  • Status: Active Grant
First Claim
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1. A light emitting device comprising:

  • a reflective electrode;

    a semiconductor layer over the reflective electrode, the semiconductor layer comprising a light emitting layer; and

    a light extraction structure arranged on the semiconductor layer,wherein a distance between the reflective electrode and a center of the light emitting layer falls within the ranges represented by an odd multiple of λ

    /(4n)±

    α

    , where “

    λ



    represents a wavelength of light emitted from the light emitting layer, “

    n”

    represents a refractive index of the semiconductor layer, and “

    α



    represents 0.14λ

    /n.

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