Non-volatile memory device and operation method of the same
First Claim
1. A non-volatile memory device comprising:
- one or more main strings each including first and second substrings separately including a plurality of memory cell transistors;
a bit line; and
a charge supply line configured to provide charges to or block charges from the first and second substrings of each of the main strings,wherein each of the main strings includesa first transistor connected to the first substring,a second transistor connected to the first transistor,a third transistor connected to the second substring, anda fourth transistor connected to the third transistor, andwherein the bit line is electrically connected to gates of at least one of the first and second transistors, and at least one of the third and fourth transistors.
1 Assignment
0 Petitions
Accused Products
Abstract
The non-volatile memory device may include one or more main strings each of which may include first and second substrings which may separately include a plurality of memory cell transistors; and a charge supply line which may be configured to provide charges to or block charges from the first and second substrings of each of the main strings, wherein each of the main strings may include a first ground selection transistor which may be connected to the first substring; a first substring selection transistor which may be connected to the first ground selection transistor; a second ground selection transistor which may be connected to the second substring; and a second substring selection transistor which may be connected to the second ground selection transistor. A method of programming a target cell of the memory device includes activating selection transistors connected to a main string and substring of the target cell.
10 Citations
22 Claims
-
1. A non-volatile memory device comprising:
-
one or more main strings each including first and second substrings separately including a plurality of memory cell transistors; a bit line; and a charge supply line configured to provide charges to or block charges from the first and second substrings of each of the main strings, wherein each of the main strings includes a first transistor connected to the first substring, a second transistor connected to the first transistor, a third transistor connected to the second substring, and a fourth transistor connected to the third transistor, and wherein the bit line is electrically connected to gates of at least one of the first and second transistors, and at least one of the third and fourth transistors. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13, 14, 15, 16, 17, 18, 19, 20, 21, 22)
-
Specification