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Sequential UV induced chemical vapor deposition

  • US 7,897,215 B1
  • Filed: 06/18/2003
  • Issued: 03/01/2011
  • Est. Priority Date: 05/03/2001
  • Status: Active Grant
First Claim
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1. A process for depositing a conformal thin film of a dielectric or conductive material on a semiconductor substrate during semiconductor device fabrication, comprising:

  • (a) placing said semiconductor substrate in a process chamber;

    (b) evacuating said process chamber;

    (c) introducing a flow of a first reactant gas in vapor phase into said process chamber, said first reactant gas forming an adsorbed saturated layer of said first reactant gas on said substrate;

    (d) evacuating said process chamber;

    (e) exposing said substrate to a flux of ultra-violet radiation for inducing a chemical reaction of said adsorbed saturated layer of said first reactant gas to form a portion of said conformal thin film of a dielectric or conductive material, wherein the flux of ultra-violet radiation directly interacts with the adsorbed saturated layer by breaking chemical bonds within the adsorbed saturated layer to induce the chemical reaction;

    (f) evacuating said process chamber; and

    (g) repeating (c) through (f) multiple times to deposit the thin film.

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