Method for manufacturing organic device and electronic apparatus

• US 7,897,216 B2
• Filed: 02/09/2008
• Issued: 03/01/2011
• Est. Priority Date: 02/21/2007
• Status: Active Grant

• Current Assignee: E Ink Holdings Incorporated
• Original Assignee: Seiko Epson Corporation (Seiko Group)
• Inventors: Nakamura, Kiyoshi
• Primary Examiner(s): Padgett; Marianne L
• Application Number:
  US12/069,241
• Publication Number:
  US 20080199634A1
• Time in Patent Office: 1,116 Days
• Field of Search: 438/99, 427/596, 427/558
• US Class Current: 427/553
• CPC Class Codes: H10K 10/462 Insulated gate field-effect transistors [IGFETs]
• CPC Class Codes: H10K 71/135 using ink-jet printing
• CPC Class Codes: H10K 71/211 by selective transformation of an existing layer
• CPC Class Codes: H10K 71/421 using coherent electromagnetic radiation, e.g. laser annealing
• CPC Class Codes: H10K 85/113 Heteroaromatic compounds comprising sulfur or selene, e.g. polythiophene
• CPC Class Codes: H10K 85/115 Polyfluorene; Derivatives thereof
• CPC Class Codes: H10K 85/657 Polycyclic condensed heteroaromatic hydrocarbons
• CPC Class Codes: H10K 85/6576 comprising only sulfur in the heteroaromatic polycondensed ring system, e.g. benzothiophene
• CPC Class Codes: Y10T 428/31504 Composite [nonstructural laminate]

Abstract

A method for manufacturing an organic device includes disposing a solution containing a conductive organic material in a first region on a substrate, drying the solution to form a conductive organic film in the first region, and irradiating the conductive organic film formed in a second region other than the first region with light to decrease the conductivity of the conductive organic film.

Claims

1. A method for manufacturing an electro-optic device including thin-film transistors each having an electrically conductive organic film, a gate insulating film formed on the electrically conductive film, and a gate electrode formed on the gate insulating film, the method comprising:

providing a substrate;

providing a pixel electrode on the substrate;

providing a data line on the substrate, the data line being separated from the pixel electrode;

disposing a solution containing an electrically conductive organic material in a first region and in a second region, the first region being a region located between the pixel electrode and the data line and overlapping a portion of the pixel electrode and a portion of the data line, the second region being a region located outside the first region where the solution is undesirably disposed;

drying the solution disposed in the first region and in the second region to form the electrically conductive organic film in the first region and in the second region;

forming the gate insulating film on the pixel electrode, the data line, and the electrically conductive organic film disposed in the first region and the second region;

forming the gate electrode on the gate insulating film over the portion of the electrically conductive organic film disposed in the first region; and

irradiating the gate electrode and the electrically conductive organic film formed in the second region with light to decrease the electrical conductivity of the electrically conductive organic film formed in the second region;

wherein the gate electrode prevents the portion of the electrically conductive organic film formed in the first region from being irradiated by the light.

2. The method according to claim 1, wherein the electrically conductive organic film is a π

-conjugated organic film, and the light has a wavelength and energy with which π

-electron orbital overlap in a molecular skeleton involved in π

-conjugation of the π

-conjugated organic film is cut by changing the steric structure of the molecular skeleton.

3. The method according to claim 2, wherein the light is visible light.

4. The method according to claim 1, wherein the electrically conductive organic film is a π

-conjugated organic film, and the light has a wavelength and energy with which the electrically conductive organic film is oxidized in the presence of oxygen or moisture.

5. The method according to claim 4, wherein the light is ultraviolet light.

6. The method according to claim 1, further comprising:

annealing the electrically conductive organic film after forming the electrically conductive organic film by heating the electrically conductive organic film to a temperature of ±

50°

C. from the glass transition temperature of the electrically conductive organic film,

wherein the annealing is performed after the electrically conductive organic film is irradiated with the light.