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Light emitting diodes (LEDs) with improved light extraction by roughening

  • US 7,897,420 B2
  • Filed: 12/14/2007
  • Issued: 03/01/2011
  • Est. Priority Date: 01/11/2005
  • Status: Active Grant
First Claim
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1. A method comprising:

  • applying a mask to a surface of a light-emitting diode (LED) wafer;

    etching the surface of the LED wafer such that protuberances remain on the etched surface, wherein lateral surfaces of the protuberances form an angle of greater than 90°

    with the etched surface of the LED wafer; and

    roughening or texturing the etched surface of the LED wafer including the protuberances.

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