Light emitting diodes (LEDs) with improved light extraction by roughening
First Claim
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1. A method comprising:
- applying a mask to a surface of a light-emitting diode (LED) wafer;
etching the surface of the LED wafer such that protuberances remain on the etched surface, wherein lateral surfaces of the protuberances form an angle of greater than 90°
with the etched surface of the LED wafer; and
roughening or texturing the etched surface of the LED wafer including the protuberances.
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Abstract
Systems and methods are disclosed for fabricating a semiconductor light-emitting diode (LED) device by forming an n-doped gallium nitride (n-GaN) layer on the LED device and roughening the surface of the n-GaN layer to extract light from an interior of the LED device.
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Citations
16 Claims
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1. A method comprising:
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applying a mask to a surface of a light-emitting diode (LED) wafer; etching the surface of the LED wafer such that protuberances remain on the etched surface, wherein lateral surfaces of the protuberances form an angle of greater than 90°
with the etched surface of the LED wafer; androughening or texturing the etched surface of the LED wafer including the protuberances. - View Dependent Claims (2, 3, 4, 5, 6)
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7. A method comprising:
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providing a light-emitting diode (LED) wafer assembly, comprising; a conductive substrate; a p-doped layer disposed above the conductive substrate; an active layer disposed above the p-doped layer; an n-doped layer disposed above the active layer; applying a mask to a surface of the n-doped layer; etching the surface of the n-doped layer such that protuberances remain on the etched surface, wherein lateral surfaces of the protuberances form an angle of greater than 90°
with the etched surface of the n-doped layer; androughening or texturing the etched surface of the n-doped layer including the protuberances. - View Dependent Claims (8, 9, 10, 11, 12, 13, 14, 15, 16)
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Specification