Method for production of a radiation-emitting semiconductor chip
First Claim
1. A method for micropatterning a radiation-emitting surface of a semiconductor layer sequence for a thin-film light-emitting diode chip, comprising the steps of:
- (a) growing the semiconductor layer sequence on a substrate;
(b) forming or applying a mirror layer on the semiconductor layer sequence, which reflects back into the semiconductor layer sequence at least part of a radiation that is generated in the semiconductor layer sequence during operation thereof;
(c) separating the semiconductor layer sequence from the substrate with a lift-off method, in which a separation zone in the semiconductor layer sequence is at least partly decomposed such that anisotropic residues of a constituent of the separation zone remain at a separation surface of the semiconductor layer sequence and the substrate is separated from said semiconductor layer sequence, the anisotropic residues being formed on the semiconductor sequence as a layer having a varying layer thickness; and
(d) etching the separation surface—
provided with the anisotropic residues—
of the semiconductor layer sequence with a dry etching method, a gaseous etchant or a wet-chemical etchant, wherein the anisotropic residues are temporarily used as an etching mask, wherein the etching results in roughening the separation surfacewherein the separation zone that is decomposed in step (c) contains AlGaN, an Al content of the AlGaN lies between approximately 1% and approximately 10%, and Al of said AlGaN is sintered into the semiconductor layer sequence.
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Abstract
A method for micropatterning a radiation-emitting surface of a semiconductor layer sequence for a thin-film light-emitting diode chip. The semiconductor layer sequence is grown on a substrate. A mirror layer is formed or applied on the semiconductor layer sequence, which reflects back into the semiconductor layer sequence at least part of a radiation that is generated in the semiconductor layer sequence during the operation thereof and is directed toward the mirror layer. The semiconductor layer sequence is separated from the substrate by means of a lift-off method, in which a separation zone in the semiconductor layer sequence is at least partly decomposed in such a way that anisotropic residues of a constituent of the separation zone, in particular a metallic constituent of the separation layer, remain at the separation surface of the semiconductor layer sequence, from which the substrate is separated. The separation surface—provided with the residues—of the semiconductor layer sequence with a dry etching method, a gaseous etchant or a wet-chemical etchant, wherein the anisotropic residues are at least temporarily used as an etching mask. A semiconductor chip is produced according to such a method.
22 Citations
26 Claims
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1. A method for micropatterning a radiation-emitting surface of a semiconductor layer sequence for a thin-film light-emitting diode chip, comprising the steps of:
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(a) growing the semiconductor layer sequence on a substrate; (b) forming or applying a mirror layer on the semiconductor layer sequence, which reflects back into the semiconductor layer sequence at least part of a radiation that is generated in the semiconductor layer sequence during operation thereof; (c) separating the semiconductor layer sequence from the substrate with a lift-off method, in which a separation zone in the semiconductor layer sequence is at least partly decomposed such that anisotropic residues of a constituent of the separation zone remain at a separation surface of the semiconductor layer sequence and the substrate is separated from said semiconductor layer sequence, the anisotropic residues being formed on the semiconductor sequence as a layer having a varying layer thickness; and (d) etching the separation surface—
provided with the anisotropic residues—
of the semiconductor layer sequence with a dry etching method, a gaseous etchant or a wet-chemical etchant, wherein the anisotropic residues are temporarily used as an etching mask, wherein the etching results in roughening the separation surfacewherein the separation zone that is decomposed in step (c) contains AlGaN, an Al content of the AlGaN lies between approximately 1% and approximately 10%, and Al of said AlGaN is sintered into the semiconductor layer sequence. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13, 14, 15, 16, 17, 18, 19, 20, 21, 22, 23)
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24. A method for micropatterning a radiation-emitting surface of a semiconductor layer sequence for a thin-film light-emitting diode chip, comprising the steps of:
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(a) growing the semiconductor layer sequence on a substrate; (b) forming or applying a mirror layer on the semiconductor layer sequence, which reflects back into the semiconductor layer sequence at least part of a radiation that is generated in the semiconductor layer sequence during operation thereof; (c) separating the semiconductor layer sequence from the substrate with a lift-off method, in which a separation zone in the semiconductor layer sequence is at least partly decomposed such that anisotropic residues of a constituent of the separation zone remain at a separation surface of the semiconductor layer sequence and the substrate is separated from said semiconductor layer sequence, the anisotropic residues being formed on the semiconductor sequence as a layer having a varying layer thickness; and (d) etching the separation surface—
provided with the anisotropic residues—
of the semiconductor layer sequence with a dry etching method, a gaseous etchant or a wet-chemical etchant, wherein the anisotropic residues are temporarily used as an etching mask, wherein the etching results in roughening the separation surfacewherein the separation zone that is decomposed in step (c) contains A1GaN, and Al of said AlGaN of the separation zone is sintered into the semiconductor layer sequence; and wherein the separation zone has a GaN layer adjoined by an AlGaN layer on a side remote from the substrate, and in step (c) the entire GaN layer and part of the AlGaN layer are decomposed. - View Dependent Claims (25, 26)
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Specification