Methods of forming recessed access devices associated with semiconductor constructions
First Claim
1. A method of forming recessed access devices associated with a semiconductor construction, comprising:
- providing a semiconductor substrate comprising monocrystalline silicon;
forming recessed access device trenches within the monocrystalline silicon of the substrate;
filling the recessed access device trenches with a first electrically insulative material;
patterning the first electrically insulative material into a mask defining a plurality of access device regions, the access device regions being islands surrounded by an isolation region;
the access device regions comprising only portions of the recessed access device trenches;
etching into the monocrystalline silicon of the substrate within said isolation region to form at least one cavity within the monocrystalline silicon and extending around the access device regions;
filling the at least one cavity with a second electrically insulative material;
removing at least the majority of the first electrically insulative material while leaving the second electrically insulative material within the at least one cavity; and
after removing at least the majority of the first electrically insulative material, forming gate material within the portions of the recessed access device trenches comprised by the access device regions.
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Accused Products
Abstract
The invention includes methods of forming recessed access devices. A substrate is provided to have recessed access device trenches therein. A pair of the recessed access device trenches are adjacent one another. Electrically conductive material is formed within the recessed access device trenches, and source/drain regions are formed proximate the electrically conductive material. The electrically conductive material and source/drain regions together are incorporated into a pair of adjacent recessed access devices. After the recessed access device trenches are formed within the substrate, an isolation region trench is formed between the adjacent recessed access devices and filled with electrically insulative material to form a trenched isolation region.
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Citations
12 Claims
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1. A method of forming recessed access devices associated with a semiconductor construction, comprising:
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providing a semiconductor substrate comprising monocrystalline silicon; forming recessed access device trenches within the monocrystalline silicon of the substrate; filling the recessed access device trenches with a first electrically insulative material; patterning the first electrically insulative material into a mask defining a plurality of access device regions, the access device regions being islands surrounded by an isolation region;
the access device regions comprising only portions of the recessed access device trenches;etching into the monocrystalline silicon of the substrate within said isolation region to form at least one cavity within the monocrystalline silicon and extending around the access device regions; filling the at least one cavity with a second electrically insulative material; removing at least the majority of the first electrically insulative material while leaving the second electrically insulative material within the at least one cavity; and after removing at least the majority of the first electrically insulative material, forming gate material within the portions of the recessed access device trenches comprised by the access device regions. - View Dependent Claims (2, 3, 4, 5, 6)
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7. A method of forming recessed access devices associated with a semiconductor construction, comprising:
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forming recessed access device trenches extending into a semiconductor substrate; depositing gate material within the recessed access device trenches; forming a first electrically insulative material over the gate material; patterning the first electrically insulative material into a mask defining a plurality of access device regions, the access device regions being islands surrounded by an isolation region;
the access device regions comprising only portions of the recessed access device trenches;etching into the substrate of said isolation region to recess the substrate of said isolation region, the etching also removing the gate material from between the access device regions while leaving the gate material within the access device regions; covering the recessed substrate with a second electrically insulative material to cover the isolation region with the second electrically insulative material; removing the first electrically insulative material; and after removing the first electrically insulative material, forming a plurality of conductive lines, individual conductive lines extending across multiple access device regions and electrically interconnecting gate material of the multiple access device regions with one another. - View Dependent Claims (8, 9, 10, 11, 12)
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Specification