Trench IGBT with trench gates underneath contact areas of protection diodes
First Claim
1. A trench semiconductor device comprising an electrostatic discharge (ESD) protection Zener diode having at least an anode trenched contact disposed right above the center of one buffer trenched gate underneath said ESD protection Zener diode and at least a cathode trenched contact disposed right above the center of another buffer trenched gate underneath said ESD protection Zener diode to prevent a shortage between said anode and cathode of said ESD protection Zener diode;
- said anode trenched contact and said cathode trenched contact having a trench width not greater than said buffer trenched gates;
an insulating layer disposed between said ESD protection Zener diode and said buffer trenched gates; and
said buffer trenched gates comprising a single doped polysilicon layer filled into said trenched gates and padded with a gate oxide layer.
1 Assignment
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Accused Products
Abstract
A trench PT IGBT (or NPT IGBT) having clamp diodes for ESD protection and prevention of shortage among gate, emitter and collector. The clamp diodes comprise multiple back-to-back Zener Diode composed of doped regions in a polysilicon layer doped with dopant ions of a first conductivity type next to a second conductivity type disposed on an insulation layer above said semiconductor power device. Trench gates are formed underneath the contact areas of the clamp diodes as the buffer layer for prevention of shortage.
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Citations
21 Claims
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1. A trench semiconductor device comprising an electrostatic discharge (ESD) protection Zener diode having at least an anode trenched contact disposed right above the center of one buffer trenched gate underneath said ESD protection Zener diode and at least a cathode trenched contact disposed right above the center of another buffer trenched gate underneath said ESD protection Zener diode to prevent a shortage between said anode and cathode of said ESD protection Zener diode;
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said anode trenched contact and said cathode trenched contact having a trench width not greater than said buffer trenched gates; an insulating layer disposed between said ESD protection Zener diode and said buffer trenched gates; and said buffer trenched gates comprising a single doped polysilicon layer filled into said trenched gates and padded with a gate oxide layer. - View Dependent Claims (2, 3, 4, 5, 6, 7)
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8. A trench IGBT comprising a Zener diode connected between a gate metal and a collector metal of said trench IGBT as a gate-collector (G-C) clamp diode wherein said G-C clamp diode has trench gates underneath contact areas of said G-C diode and at least an anode trenched contact disposed right above the center of one buffer trenched gate underneath said G-C clamp diode and at least a cathode trenched contact disposed right above the center of another buffer trenched gate underneath said G-C clamp diode to prevent a shortage between said anode and cathode of said G-C clamp diode;
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said anode trenched contact and said cathode trenched contact have a trench width not greater than said buffer trenched gates; an insulating layer disposed between said G-C clamp diode and said buffer trenched gates; and said buffer trenched gates comprise a single doped polysilicon layer filled into said trenched gates padded with a gate oxide layer. - View Dependent Claims (9, 10, 11, 12, 13, 14)
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15. A trench IGBT comprising a G-E Protection Zener diode connected between a gate metal and an emitter metal of said trench IGBT and a G-C clamp Zener diode connected between said gate metal and a collector metal of said trench IGBT;
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both said G-E protection Zener diode and said G-C clamp Zener diode have at least one trenched anode contact and at least one trenched cathode contact; each of said trenched anode contact and said trenched cathode contact are disposed right above the center of a buffer trenched gate underneath said G-E protection Zener diode or G-C clamp Zener diode; said trenched anode and cathode contacts of said G-E protection Zener diode and said G-C clamp diodes have a trench width not greater than said buffer trenched gates underneath said G-E protection diode or said G-C clamp diode; an insulating layer disposed between said G-E protection Zener diode and said buffer trenched gates; said insulating layer disposed between said G-C clamp Zener diode and said buffer trenched gates; said buffer trenched gates comprising a single doped polysilicon layer filled into said trenched gates padded with a gate oxide layer. - View Dependent Claims (16, 17, 18, 19, 20, 21)
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Specification