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Acceleration sensor and fabrication method thereof

  • US 7,900,515 B2
  • Filed: 11/28/2007
  • Issued: 03/08/2011
  • Est. Priority Date: 06/05/2007
  • Status: Active Grant
First Claim
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1. An acceleration sensor, comprising:

  • a first semiconductor layer;

    a first insulation layer on said first semiconductor layer;

    a second semiconductor layer on said first insulation layer;

    an acceleration sensor device in said first semiconductor layer, said acceleration sensor device including a supporting portion, said supporting portion abutting a surface including a concave portion facing to said acceleration sensor device;

    a control device, configured to control said acceleration sensor device, on said second semiconductor layer, said second semiconductor layer including a through hole for electrically connecting said acceleration sensor device and said control device to each other, said through hole reaching said first semiconductor layer, said control device opposing said surface across said acceleration sensor device;

    a second insulation layer covering wall surfaces of said through hole; and

    a conductive layer within said through hole for electrically connecting said acceleration sensor device and said control device to each other through said second semiconductor layer.

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