Reconstituted wafer level stacking
First Claim
1. A method of fabricating a stacked microelectronic assembly comprising:
- a) forming a structure comprising a plurality of first microelectronic elements each having a front face bonded to a carrier and a first edge surface extending away from the front face, and a plurality of first traces extending along said front face towards said first edge surface;
b) removing material from said first edge surfaces to expose at least a portion of each of said first traces;
c) aligning and joining a plurality of second microelectronic elements with said structure such that a front face of each said second microelectronic element is facing a rear face of a first microelectronic element, each second microelectronic element having a second edge surface and a plurality of second traces extending along said front face of said second microelectronic element towards said second edge surface;
d) removing material from said second edge surfaces to expose at least a portion of each of said second traces; and
e) connecting leads to said first and second traces.
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Accused Products
Abstract
A stacked microelectronic assembly is fabricated from a structure which includes a plurality of first microelectronic elements having front faces bonded to a carrier. Each first microelectronic element may have a first edge and a plurality of first traces extending along the front face towards the first edge. After exposing at least a portion of the first traces, a dielectric layer is formed over the plurality of first microelectronic elements. After thinning the dielectric layer, a plurality of second microelectronic elements are aligned and joined with the structure such that front faces of the second microelectronic elements are facing the rear faces of the plurality of first microelectronic elements. Processing is repeated to form the desirable number of layers of microelectronic elements. In one embodiment, the stacked layers of microelectronic elements may be notched at dicing lines to expose edges of traces, which may then be electrically connected to leads formed in the notches. Individual stacked microelectronic units may be separated from the stacked microelectronic assembly by any suitable dicing, sawing or breaking technique.
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Citations
16 Claims
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1. A method of fabricating a stacked microelectronic assembly comprising:
- a) forming a structure comprising a plurality of first microelectronic elements each having a front face bonded to a carrier and a first edge surface extending away from the front face, and a plurality of first traces extending along said front face towards said first edge surface;
b) removing material from said first edge surfaces to expose at least a portion of each of said first traces;
c) aligning and joining a plurality of second microelectronic elements with said structure such that a front face of each said second microelectronic element is facing a rear face of a first microelectronic element, each second microelectronic element having a second edge surface and a plurality of second traces extending along said front face of said second microelectronic element towards said second edge surface;
d) removing material from said second edge surfaces to expose at least a portion of each of said second traces; and
e) connecting leads to said first and second traces. - View Dependent Claims (2, 3, 4, 8, 9, 10, 11, 12)
- a) forming a structure comprising a plurality of first microelectronic elements each having a front face bonded to a carrier and a first edge surface extending away from the front face, and a plurality of first traces extending along said front face towards said first edge surface;
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5. A method of fabricating a stacked microelectronic assembly comprising:
- a) forming a structure comprising a plurality of first microelectronic elements having front faces bonded to a carrier, each first microelectronic element having a first edge and a plurality of first traces extending along said front face towards said first edge;
b) removing material from said first edges to expose at least a portion of each of said first traces;
c) aligning and joining a plurality of second microelectronic elements with said structure such that a front face of each said second microelectronic element is facing a rear face of a first microelectronic element, each second microelectronic element having a second edge and a plurality of second traces extending along said front face of said second microelectronic element towards said second edge;
d) removing material from said second edges to expose at least a portion of each of said second traces; and
e) connecting leads to said first and second traces,wherein said step e) further includes forming notches from a top surface of said stacked microelectronic assembly to a depth in said stacked microelectronic assembly sufficient to expose edges of said exposed portions of first and second traces in walls of said notches; and
wherein connecting leads to said first and second traces comprises forming leads in said walls of said notches that electrically contact said exposed edges of said first and second traces. - View Dependent Claims (6, 7)
- a) forming a structure comprising a plurality of first microelectronic elements having front faces bonded to a carrier, each first microelectronic element having a first edge and a plurality of first traces extending along said front face towards said first edge;
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13. A method of fabricating a stacked microelectronic assembly comprising:
- a) forming a first structure comprising a plurality of spaced-apart first microelectronic elements each having a front face bonded to a carrier layer and an opposing rear face;
each first microelectronic element comprising a plurality of first traces extending along said front face towards a first edge of said microelectronic element;
b) from said rear face, removing material from said first edge of each first microelectronic element until at least a portion of each of said first traces is exposed;
c) forming a dielectric layer over said plurality of spaced-apart first microelectronic elements;
said dielectric layer forming a dielectric region between said spaced-apart first microelectronic elements;
d) from said rear faces, thinning said dielectric layer and said plurality of spaced-apart first microelectronic elements to a desired thickness;
e) forming a second structure comprising a plurality of spaced-apart second microelectronic elements by (i) aligning said plurality of spaced-apart second microelectronic elements with said plurality of spaced-apart first microelectronic elements such that a front face of each said second microelectronic element is facing a rear face of a first microelectronic element, and (ii) by joining said plurality of spaced-apart and aligned second microelectronic elements to said first structure;each second microelectronic element having a second edge and a plurality of second traces extending along said front face of said second microelectronic element towards said second edge;
f) from said rear face, removing material from said second edge of each second microelectronic element until at least a portion of each of said second traces is exposed;
g) forming a dielectric layer over said plurality of spaced-apart second microelectronic elements;
said dielectric layer forming a dielectric region between said spaced-apart second microelectronic elements;
h) from said rear faces, thinning said dielectric layer and said plurality of spaced-apart second microelectronic elements to a desired thickness;
i) forming notches from a top surface of said second structure to a depth in said stacked microelectronic assembly sufficient to expose a cross-sectional edge of each portion of said first and second traces in walls of said notches; and
j) forming leads in said walls of said notches;
said leads electrically connecting said exposed edges of said first and second traces;
said leads extending from said walls to said top surface of said stacked microelectronic assembly. - View Dependent Claims (14, 15, 16)
- a) forming a first structure comprising a plurality of spaced-apart first microelectronic elements each having a front face bonded to a carrier layer and an opposing rear face;
Specification