Graded high germanium compound films for strained semiconductor devices
First Claim
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1. A method of forming a crystalline compound film, comprising:
- selectively forming a low germanium content seed layer;
selectively forming a transition layer on the low germanium content seed layer;
the transition layer formed while decrementing a process temperature from a first temperature to a second temperature, and while decrementing a dichlorosilane, hydrogen chloride, and germane flow from a higher flow to a lower flow; and
selectively forming a high germanium content layer on the transition layer.
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Abstract
Embodiments of an apparatus and methods for providing a graded high germanium compound region are generally described herein. Other embodiments may be described and claimed.
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Citations
10 Claims
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1. A method of forming a crystalline compound film, comprising:
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selectively forming a low germanium content seed layer; selectively forming a transition layer on the low germanium content seed layer;
the transition layer formed while decrementing a process temperature from a first temperature to a second temperature, and while decrementing a dichlorosilane, hydrogen chloride, and germane flow from a higher flow to a lower flow; andselectively forming a high germanium content layer on the transition layer. - View Dependent Claims (2, 3, 4, 5, 6)
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7. A method comprising:
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forming a gate stack and a pair of spacers on a multi-gate body, wherein the spacers are formed on laterally opposite sides of the gate stack; etching the multi-gate body at regions adjacent to the spacers; and selectively depositing a graded high-germanium content silicon germanium stack to form a source region and a drain region directly adjacent to the multi-gate body, wherein the graded high-germanium content silicon germanium stack is formed of a silicon-germanium seed layer, a transition layer, and a high germanium content layer, and wherein the transition layer is formed while decrementing a dichlorosilane, hydrogen chloride, and germane flow from a higher flow to a lower flow. - View Dependent Claims (8, 9, 10)
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Specification